Journal of the Korean Solar Energy Society (한국태양에너지학회 논문집)

The Korean Solar Energy Society (한국태양에너지학회)
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Fabrication and Chracteristics of Cutting Cell with Various Laser Conditions

다양한 레이저 조건에 따른 컷팅셀 제작 및 특성 분석

  • Park, Jeong Eun (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Kim, Dong Sik (Department of IT Convergence, Korea National University of Transportation) ;
  • Choi, Won Seok (Department of IT Convergence, Korea National University of Transportation) ;
  • Jang, Jae Joon (Department of IT Convergence, Korea National University of Transportation) ;
  • Lim, Dong gun (Department of Electronic Engineering, IT Convergence)
  • 박정은 (한국교통대학교 전자공학과) ;
  • 김동식 (한국교통대학교 정보기술융합학과) ;
  • 최원석 (한국교통대학교 정보기술융합학과) ;
  • 장재준 (한국교통대학교 정보기술융합학과) ;
  • 임동건 (한국교통대학교 전자공학과, 정보기술융합학과)
  • Received : 2019.03.27
  • Accepted : 2019.06.19
  • Published : 2019.06.30
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Abstract

Laser cutting cell of solar cells can achieve high voltage and efficiency through more array than conventional 6 inch cell compared to same area. In this study, we fabricated c-Si cutting cell with various lasers and laser conditions such as power, speed, and number of times. In the case of picosecond laser, excellent surface characteristics were obtained due to small surface defects and low thermal damage at the output of 20W and the speed of 100 mm/s. However, it is not possible to fabricate a cutting cell having good characteristics due to nonuniform cutting inside the wafer when the processing for forming a cutting cell is not sufficiently performed. For nanosecond lasers, the best wafer characteristics were obtained for fabrication of excellent cutting cells at a frequency of 500 kHz and a laser speed of 100 mm/s. However, the nanosecond laser has not been processed sufficiently in the condition of a number of times. As a result, it was confirmed that the wafer thickness was cut by $63{\mu}m$ of the cell thickness of $170{\mu}m$ in the condition of five times of laser process. It was found that more than 30% of the wafer thickness had to be processed to fabricate the cutting cell. After cutting the 6-inch cell having the voltage of 0.65 V, we obtained the voltage of about 0.63 V.

Keywords

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Fig. 1 Diagram of cutting cell using AutoCAD simulation

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Fig. 2 Surface image with laser power

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Fig. 3 Cross-section image in the condition of laser power 20 W

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Fig. 4 Surface image with laser number of times

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Fig. 5 Cross-section image with laser number of times

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Fig. 6 Surface image with laser frequency

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Fig. 7 Surface and cross-section images in the condition of laser frequency 700 kHz

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Fig. 8 Cutting cell image with laser frequency

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Fig. 9 Surface image with laser speed

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Fig. 10 Surface and cross section images in the condition of laser speed 50 mm/s

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Fig. 11 Cutting cell image with laser speed

Table 1 Process conditions with laser power

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Table 2 Process conditions with laser speed

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Table 3 Process conditions with laser number of times

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Table 4 Process conditions with laser frequency

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Table 5 Process conditions with laser speed

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