• Journal of the Korean Solar Energy Society
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• v.39 no.3
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• pp.9-17
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• 2019

Laser cutting cell of solar cells can achieve high voltage and efficiency through more array than conventional 6 inch cell compared to same area. In this study, we fabricated c-Si cutting cell with various lasers and laser conditions such as power, speed, and number of times. In the case of picosecond laser, excellent surface characteristics were obtained due to small surface defects and low thermal damage at the output of 20W and the speed of 100 mm/s. However, it is not possible to fabricate a cutting cell having good characteristics due to nonuniform cutting inside the wafer when the processing for forming a cutting cell is not sufficiently performed. For nanosecond lasers, the best wafer characteristics were obtained for fabrication of excellent cutting cells at a frequency of 500 kHz and a laser speed of 100 mm/s. However, the nanosecond laser has not been processed sufficiently in the condition of a number of times. As a result, it was confirmed that the wafer thickness was cut by $63{\mu}m$ of the cell thickness of $170{\mu}m$ in the condition of five times of laser process. It was found that more than 30% of the wafer thickness had to be processed to fabricate the cutting cell. After cutting the 6-inch cell having the voltage of 0.65 V, we obtained the voltage of about 0.63 V.