반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

플라즈마 표면 처리를 이용한 TiO2 MOS 커패시터의 특성 개선

Improvement in Capacitor Characteristics of Titanium Dioxide Film with Surface Plasma Treatment

  • 신동혁 (연세대학교 신소재공학과) ;
  • 조혜림 (연세대학교 신소재공학과) ;
  • 박세란 (연세대학교 신소재공학과) ;
  • 오훈정 (연세대학교 BIT 마이크로 팹 연구소) ;
  • 고대홍 (연세대학교 신소재공학과)
  • Shin, Donghyuk (Department of Materials Science and Engineering, Yonsei University) ;
  • Cho, Hyelim (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Seran (Department of Materials Science and Engineering, Yonsei University) ;
  • Oh, Hoonjung (BIT Micro Fab Research Center, Yonsei University) ;
  • Ko, Dae-Hong (Department of Materials Science and Engineering, Yonsei University)
  • 투고 : 2019.02.07
  • 심사 : 2019.03.17
  • 발행 : 2019.03.31
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초록

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

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참고문헌

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