Fig. 1. Cross-sectional image of the FC μ-LEDs.
Fig. 4. Far-field light intensity angular distribution for the FC Fig. 2. (a) Result of light extraction efficiency and (b) side/top ratio according to changing the length of one side of the FC μ-LEDs.
Fig. 5. Image of the ray tracing according to changing thelength of one side of the FC μ-LEDs.
Fig. 7. Far-field light intensity angular distribution for the nonPSS FC μ-LEDs.
Fig. 9. Far-field light intensity angular distribution for the verticalFC μ-LEDs.
Fig. 10. Light extraction efficiency of (a) total, (b) top, and (c) 4 sides area according to changing the length of one side of the LEDs.
Fig. 2. (a) Result of light extraction efficiency and (b) side/top ratio according to changing the length of one side of the FC μ-LEDs.
Fig. 6. (a) Result of light extraction efficiency and (b) side/top ratio according to changing the length of one side of the non PSS FC μ-LEDs.
Fig. 8. (a) Result of light extraction efficiency and (b) side/top ratio according to changing the length of one side of the vertical FC μ-LEDs.
Fig. 3. Image of the side irradiance according to changing the length of one side of the FC Fig. 2. (a) Result of light extraction efficiency and (b) side/top ratio according to changing the length of one side of the FC μ-LEDs.
Table 1. Height and refractive index of the each layer.
References
- J. Piprek, Phys. Status Solidi A, 207, 2217 (2010). [DOI: https://doi.org/10.1002/pssa.201026149]
- Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett., 91, 141101 (2007). [DOI: https://doi.org/10.1063/1.2785135]
- M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett., 91, 183507 (2007). [DOI: https://doi.org/10.1063/1.2800290]
- X. Ni, Q. Fan, R. Shimada, U. Ozgur, and H. Morkoc, Appl. Phys. Lett., 93, 171113 (2008). [DOI: https://doi.org/10.1063/1.3012388]
- Y. Yang, X. A. Cao, and C. Yan, IEEE Trans. Electron Devices, 55, 1771 (2008). [DOI: https://doi.org/10.1109/TED.2008.923561]
- J. Hader, J. V. Moloney, and S. W. Koch, Appl. Phys. Lett., 96, 221106 (2010). [DOI: https://doi.org/10.1063/1.3446889]
- Y. Y. Kudryk and A. V. Zinovchuk, Semicond. Sci. Technol., 26, 095007 (2011). [DOI: https://doi.org/10.1088/0268-1242/26/9/095007]
- Z. Gong, S. Jin, Y. Chen, J. McKendry, D. Massoubre, I. M. Watson, E. Gu, and M. D. Dawson, J. Appl. Phys., 107, 013103 (2010). [DOI: https://doi.org/10.1063/1.3276156]
- P. Tian, J.J.D. McKendry, Z. Gong, B. Guilhabert, I. M. Watson, E. Gu, Z. Chen, G. Zhang, and M. D. Dawson, Appl. Phys. Lett., 101, 231110 (2012). [DOI: https://doi.org/10.1063/1.4769835]
- T. K. Kim, M. U. Cho, J. M. Lee, Y. J. Cha, S. K. Oh, B. Chatterjee, J. H. Ryou, S. Choi, and J. S. Kwak, Phys. Status Solidi A, 215, 1700571 (2018). [DOI: https://doi.org/10.1002/pssa.201700571]
- T. Jeong, Inf. Disp., 17, 18 (2016).
- S. J. Park, LED Light extraction technology, http://webzine. kps.or.kr/contents/data/webzine/webzine/14762094724.pdf (2008).
- H. J. Park, D. K. Lee, and J. S. Kwak, J. Korean Inst. Electr. Electron. Mater. Eng., 28, 676 (2015). [DOI: https://doi.org/10.4313/JKEM.2015.28.10.676]
- S. S. Kim, J. W. Lee, and B. J. Jeon, J. Korean Inst. Electr. Electron. Mater. Eng., 30, 800 (2017). [DOI: https://doi.org/10.4313/JKEM.2017.30.12.800]
- S. J. Hwang and J. S. Kwak, J. Korean Inst. Electr. Electron. Mater. Eng., 30, 175 (2017). [DOI: https://doi.org/10.4313/JKEM.2017.30.3.175]
- M. S. Jang, W. H. Kim, Y. R, Kang, K. H. Kim, S. B. Song, J. H. Kim, and J. P. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 849 (2012). [DOI: https://doi.org/10.4313/JKEM.2012.25.10.849]
- K. S. Shin, D. Y. Kim, and T. G. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 24, 911 (2011). [DOI: https://doi.org/10.4313/JKEM.2011.24.11.911]