전력전자학회논문지 (The Transactions of the Korean Institute of Power Electronics)

  • 제24권6호
  • /
  • Pages.459-462
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  • 2019
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  • 1229-2214(pISSN)
  • /
  • 2288-6281(eISSN)
전력전자학회 (The Korean Institute of Power Electronics)
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계통 연계형 Hybrid Active NPC 인버터의 SiC MOSFET 오버슈트 전압 저감

Reducing Overshoot Voltage of SiC MOSFET in Grid-Connected Hybrid Active NPC Inverters

  • Lee, Deog-Ho (Dept. of Electrical and Computer Engineering, Ajou University) ;
  • Kim, Ye-Ji (Dept. of Electrical and Computer Engineering, Ajou University) ;
  • Kim, Seok-Min (Dept. of Electrical and Computer Engineering, Ajou University) ;
  • Lee, Kyo-Beum (Dept. of Electrical and Computer Engineering, Ajou University)
  • 투고 : 2019.07.17
  • 심사 : 2019.08.31
  • 발행 : 2019.12.20
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초록

This work presents methods for reducing overshoot voltages across the drain-source of silicon carbide (SiC) MOSFETs in grid-connected hybrid active neutral-point-clamped (ANPC) inverters. Compared with 3-level NPC-type inverter, the hybrid ANPC inverter can realize the high efficiency. However, SiC MOSFETs conduct its switching operation at high frequencies, which cause high overshoot voltages in such devices. These overshoot voltages should be reduced because they may damage switching devices and result in electromagnetic interference (EMI). Two major strategies are used to reduce the overshoot voltages, namely, adjusting the gate resistor and using a snubber capacitor. In this paper, advantages and disadvantages of these methods will be discussed. The effectiveness of these strategies is verified by experimental results.

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참고문헌

  1. K. B. Lee, Advanced Power Electronics, munundang, 2019, ISBN 979-11-5692-402-9.
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  7. D. Zhang, J. He, and S. Madhusoodhanan, "Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET," IEEE Trans. Ind. Appl., Vol. 54, No. 6, pp. 6169-6178, Nov./Dec. 2018. https://doi.org/10.1109/TIA.2018.2851561