반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

플라즈몬 효과에 의한 실리콘 기판위에 증착된 반도체 박막의 자기저항특성

Magnetonic Resistance Properties of Semiconductor Thin Films by Plasmon Effect on Fabricated Si(100) Substrate

  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2019.09.13
  • 심사 : 2019.09.26
  • 발행 : 2019.09.30
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초록

Plasmons have conductive properties using the effect of amplifying magnetic and electric fields around metal particles. The collective movement of free electrons in metal particles induces and produces the generation of plasmon. Because the plasmon is concentrated on the surface of the nanoparticles, it is also called the surface plasmon. The polarizing effect of plasma on the surface is similar to the principle of surface currents occurring in insulators. In this study, it was found the conditions under which plasma is produced in SiOC insulators and studied the electrical properties of SiOC insulators that are improved in conductivity by plasmons. Due to the heat treatment temperature of thin film, plasma formation was shown differently, metal particles were used with normal aluminium, SiOC thin films were treated with heat at 60 degrees, conductivity was improved dramatically, and heat treatment at higher temperatures was found to be less conductivity.

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참고문헌

  1. D. C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, "Amorphous IZO-based transparent thin film transistors", Thin Solid Films, Vol. 516, pp.5894-5898, 2008. https://doi.org/10.1016/j.tsf.2007.10.081
  2. T. Oh, Tunneling Phenomenon of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors for Flexible Display, EML, Vol. 11. pp.853-861, 2015.
  3. N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, "Electrical and optical properties of amorphous indium zinc oxide films", Thin Solid Films, Vol. 496(1), pp.99-103, 2006. https://doi.org/10.1016/j.tsf.2005.08.257
  4. K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, Lowtemperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process, Nature Materials, Vol. 10, pp. 45-50, 2011. https://doi.org/10.1038/nmat2914
  5. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film, Thin Solid Films, Vol. 445, pp.63-71, 2003. https://doi.org/10.1016/j.tsf.2003.09.014
  6. Li. et al., Magnetization switching using topological surface states, Sci. Adv. 5, eaaw3415, (2019) https://doi.org/10.1126/sciadv.aaw3415
  7. L. Raniero, I. Ferreira, A. Pimentel, A. Goncalves, P. Canhola, E. Fortunato, and R. Martins, "Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings", Thin Solid Films, Vol. 511-512, pp. 295-298, 2006. https://doi.org/10.1016/j.tsf.2005.12.057
  8. Cui-Zu Chang, Jinsong Zhang, Xiao Feng, Jie Shen, Zuocheng Zhang, Minghua Guo, Kang Li, Yunbo Ou, Pang Wei, Li-Li Wang, Zhong-Qing Ji, Yang Feng, Shuaihua Ji, Xi Chen, Jinfeng Jia, Xi Dai, Zhong Fang, Shou-Cheng Zhang, Ke He, Yayu Wang, Li Lu, Xu-Cun Ma, Qi-Kun Xue, Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator, Science, Vol. 340(6129), pp.167-237, 2013. https://doi.org/10.1126/science.1234414
  9. T. Oh and C. K. Choi, Comparison between SiOC thin film fabricated by using plasma enhance chemical vapor deposition and SiO2 thin film by using fourier transform infrared spectroscopy, Journal of the Korean Physical Society, Vol. 56, pp. 1150-1155, 2010. https://doi.org/10.3938/jkps.56.1150