반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

수소 유량에 따른 IZO 박막의 구조적 및 전기적 특성

Structural and Electrical Characteristics of IZO Thin Films Deposited at Different Hydrogen Flow Rate

  • 홍경림 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부)
  • Hong, Kyoung-Lim (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu-Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 투고 : 2019.08.06
  • 심사 : 2019.09.23
  • 발행 : 2019.09.30
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초록

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H2 flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

키워드

참고문헌

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