References
- J. P. Colinge, C. W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. M. Kelleher, B. McCarthy, and R. Murphy, "Nanowire transistors without junctions", Nat. nanotechnol., 5, 225 (2010). https://doi.org/10.1038/nnano.2010.15
- W. I. Park, J. M. Yoon, M. Park, J. Lee, S. K. Kim, J. W. Jeong, K. Kim, H. Y. Jeong, S. Jeon, K. S. No, J. Y. Lee, and Y. S. Jung, "Self-assembly-induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes", Nano Lett., 12, 1235 (2012). https://doi.org/10.1021/nl203597d
- Y. Hu, L. Lin, Y. Zhang, and Z. L. Wang, "Replacing a battery by a nanogenerator with 20 V output", Adv. Mater., 24, 110 (2012).
- X. Duan, C. Niu, V. Sahi, J. Chen, J. W. Parce, S. Empedocles, and J. L. Goldman, "High-performance thin-film transistors using semiconductor nanowires and nanoribbons", Nature, 425, 274 (2003). https://doi.org/10.1038/nature01996
- S. Harrell, T. Seidel, and B. Fay, "The National Technology Roadmap for Semiconductors and SEMATECH future directions", Microelectron Eng., 30, 11 (1996).
- W. Li, and M. C. Marconi, "Extreme ultraviolet Talbot interference lithography", Opt Express, 23, 25532 (2015).
- S. K. Kim, "Extreme Ultraviolet Multilayer Defect Compensation in Computational Lithography", J. Nanosci. Nanotechnol., 16, 5415 (2016).
- W. I. Park, K. Kim, H. I. Jang, J. W. Jeong, J. M. Kim, J. Choi, J. H. Park, and Y. S. Jung, "Directed self-assembly with sub-100 degrees Celsius processing temperature, sub-10 nanometer resolution, and sub-1 minute assembly time", Small, 8, 3762 (2012).
- S. J. Jeong, J. Y. Kim, B. H. Kim, H. S. Moon, and S. O. Kim, "Directed self-assembly of block copolymers for next generation nanolithography", Mater. Today, 16, 468 (2013).
- J. M. Kim, Y. J. Kim, W. I. Park, Y. H. Hur, J. W. Jeong, D. M. Sim, K. M. Baek, J. H. Lee, M. J. Kim, and Y. S. Jung, "Eliminating the Trade-Off between the Throughput and Pattern Quality of Sub-15 nm Directed Self-Assembly via Warm Solvent Annealing", Adv. Funct. Mater., 25, 306 (2015).
- Q. Xia, J. J. Yang, W. Wu, X. Li, and R. S. Williams, "Selfaligned memristor cross-point arrays fabricated with one nanoimprint lithography step", Nano Lett., 10, 2909 (2010).
- X. Liang, T. Chen, Y. S. Jung, Y. Miyamoto, G. Han, S. Cabrini, B. Ma, and D. L. Olynick, "Nanoimprint-induced molecular stacking and pattern stabilization in a solution-processed subphthalocyanine film", ACS Nano, 4, 2627 (2010).
- X. Yang, S. Xiao, W. Hu, J. Hwu, R. van de Veerdonk, K. Wago, K. Lee, and D. Kuo, "Integration of nanoimprint lithography with block copolymer directed self-assembly for fabrication of a sub-20 nm template for bit-patterned media", Nanotechnol., 25, 395301 (2014). https://doi.org/10.1088/0957-4484/25/39/395301
- J. W. Jeong, S. R. Yang, Y. H. Hur, S. W. Kim, K. M. Baek, S. Yim, H. I. Jang, J. H. Park, S. Y. Lee, C. O. Park, and Y. S. Jung, "High-resolution nanotransfer printing applicable to diverse surfaces via interface-targeted adhesion switching", Nat. comm., 5, 5387 (2014).
- J. W. Jeong, W. I. Park, L. M. Do, J. H. Park, T. H. Kim, G. Chae, and Y. S. Jung, "Nanotransfer printing with sub-10 nm resolution realized using directed self-assembly", Adv. Mater., 24, 3526 (2012).
- M. C. McAlpine, H. Ahmad, D. Wang, and J. R. Heath, "Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors", Nat. Mater., 6, 379 (2007).
- J. H. Ahn, H. Lee, and S. H. Choa, "Technology of flexible semiconductor/memory device", J. Microelectron. Packag. Soc., 20(2), 1 (2013). https://doi.org/10.6117/kmeps.2013.20.2.001
- J. G. Seol, D. J. Lee, T. W. Kim, and B. J. Kim, "Reliability study on rolling deformation of ITO thin film on flexible substrate", J. Microelectron. Packag. Soc., 25(1), 29 (2018). https://doi.org/10.6117/KMEPS.2018.25.1.029
Cited by
- 패턴전사 프린팅을 활용한 리튬이온 배터리 양극 기초소재 Li2CO3의 나노스케일 패턴화 방법 vol.27, pp.4, 2018, https://doi.org/10.6117/kmeps.2020.27.4.083