마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제25권3호
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  • Pages.7-12
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  • 2018
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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후속 열처리에 따른 Cu 박막과 ALD Ru 확산방지층의 계면접착에너지 평가

Effect of Post-annealing on the Interfacial adhesion Energy of Cu thin Film and ALD Ru Diffusion Barrier Layer

  • 정민수 ((주)앰코테크놀로지 코리아) ;
  • 이현철 ((주)스태츠칩팩코리아) ;
  • 배병현 ((주)비츠로테크) ;
  • 손기락 (안동대학교 신소재공학부 청정에너지소재기술연구센터) ;
  • 김가희 (안동대학교 신소재공학부 청정에너지소재기술연구센터) ;
  • 이승준 (영남대학교 신소재공학부) ;
  • 김수현 (영남대학교 신소재공학부) ;
  • 박영배 (안동대학교 신소재공학부 청정에너지소재기술연구센터)
  • Jeong, Minsu (Amkor Technology Korea Inc.) ;
  • Lee, Hyeonchul (STATS ChipPAC Korea LTD.) ;
  • Bae, Byung-Hyun (VITZROTECH Co., Ltd.) ;
  • Son, Kirak (School of Materials Science and Engineering, Andong National University) ;
  • Kim, Gahui (School of Materials Science and Engineering, Andong National University) ;
  • Lee, Seung-Joon (School of Materials Science and Engineering, Yeungnam University) ;
  • Kim, Soo-Hyun (School of Materials Science and Engineering, Yeungnam University) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
  • 투고 : 2018.08.31
  • 심사 : 2018.09.28
  • 발행 : 2018.09.30
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초록

차세대 초미세 Cu 배선 적용을 위한 원자층증착법(atomic layer deposition, ALD)을 이용하여 증착된 Ru확산 방지층과 Cu 박막 사이의 계면 신뢰성을 평가하기 위해, Ru 공정온도 및 $200^{\circ}C$ 후속 열처리 시간에 따라 4점굽힘시험으로 정량적인 계면접착에너지를 평가하였고, 박리계면을 분석하였다. 225, 270, $310^{\circ}C$ 세 가지 ALD Ru 공정온도에 따른 계면접착에너지는 각각 8.55, 9.37, $8.96J/m^2$로 유사한 값을 보였는데, 이는 증착온도 변화에 따라 Ru 결정립 크기 등 미세조직 및 비저항의 차이가 적어서, 계면 특성도 거의 차이가 없는 것으로 판단된다. $225^{\circ}C$의 공정온도에서 증착된 Ru 박막의 계면접착에너지는 $200^{\circ}C$ 후속 열처리시 250시간까지는 $7.59J/m^2$ 이상으로 유지되었으나, 500시간 후에는 $1.40J/m^2$로 급격히 감소하였다. 박리계면에 대한 X-선 광전자 분광기 분석 결과, 500시간 후 Cu 계면 산화로 인하여 계면접착 에너지가 감소한 것으로 확인되었다. 따라서 ALD Ru 박막은 계면신뢰성이 양호한 차세대 Cu 배선용 확산방지층 후보가 된다고 판단된다.

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

키워드

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