References
- S. Chalasani and J. M. Conrad, Proc. IEEE SoutheastCon 2008 (IEEE, Huntsville, USA, 2008) p. 442.
- K. A. Cook-Chennault, N. Thambi, and A. M. Sastry, Smart Mater. Struct., 17, 043001 (2008). [DOI: https://doi.org/10.1088/0964-1726/17/4/043001]
- N. J. Guilar, T. J. Kleeburg, A. Chen, D. R. Yankelevich, and R. Amirtharajah, IEEE Trans. VLSI Syst., 17, 627 (2009). [DOI: https://doi.org/10.1109/TVLSI.2008.2006792]
- S. Li, J. Yuan, and H. Lipson, J. Appl. Phys., 109, 026104 (2011). [DOI: https://doi.org/10.1063/1.3525045]
- R. Kashyap, T. R. Lenka, and S. Baishya, IEEE Trans. Electron Devices, 63, 1281 (2016). [DOI: https://doi.org/10.1109/TED.2015.2514160]
- H. S. Kim, J. H. Kim, and J. Kim, Int. J. Precis. Eng. Manuf., 12, 1129 (2011). [DOI: https://doi.org/10.1007/s12541-011-0151-3]
- S. B. Kim, H. Park, S. H. Kim, H. C. Wikle, J. H. Park, and D. J. Kim, J. Microelectromech. Syst., 22, 26 (2013). [DOI: https://doi.org/10.1109/JMEMS.2012.2213069]
- S. Du, Y. Jia, S. T. Chen, C. Zhao, B. Sun, E. Arroyo, and A. A. Seshia, Sens. Actuators, A, 263, 693 (2017). [DOI: https://doi.org/10.1016/j.sna.2017.06.026]
- C. J. Rupp, A. Evgrafov, K. Maute, and M. L. Dunn, J. Intell. Mater. Syst. Struct., 20, 1923 (2009). [DOI: https://doi.org/10.1177/1045389X09341200]
- W. G. Ali and G. Nagib, Proc. 2012 International Conference on Engineering and Technology (ICET) (IEEE, Cairo, Egypt, 2012), p. 1.
- T. Galchev, E. E. Aktakka, and K. Najafi, J. Microelectromech. Syst., 21, 1311 (2012). [DOI: https://doi.org/10.1109/JMEMS.2012.2205901]
- L. Gu, Microelectron. J., 42, 277 (2011). [DOI: https://doi.org/10.1016/j.mejo.2010.10.007]
- R. Hosseini and M. Hamedi, J. Micromech. Microeng., 25, 125008 (2015). [DOI: https://doi.org/10.1088/0960-1317/25/12/125008]
- S.M.K. Tabatabaei, S. Behbahani, and P. Rajaeipour, Microsyst. Technol., 22, 2435 (2016). [DOI: https://doi.org/10.1007/s00542-015-2605-5]
- R. Hosseini, and M. Hamedi, Microsyst. Technol., 22, 1127 (2016). [DOI: https://doi.org/10.1007/s00542-015-2583-7]
- A. Shebeeb and H. Salleh, Proc. 2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) (IEEE, Melaka, Malaysia, 2010), p. 275.
- A. Loui, F. T. Goericke, T. V. Ratto, J. Lee, B. R. Hart, and W. P. King, Sens. Actuators, A, 147, 516 (2008). [DOI: https://doi.org/10.1016/j.sna.2008.06.016]
- M. S. Lee, C. I. Kim, J. S. Yun, W. I. Park, Y. W. Hong, J. H. Paik, J. H. Cho, Y. H. Park, and Y. H. Jeong, J. Korean Inst. Electr. Electron. Mater. Eng., 30, 768 (2017). [DOI: https://doi.org/10.4313/JKEM.2017.30.12.768]
- N. Kong, D. S. Ha, A. Erturk, and D. J. Inman, J. Intell. Mater. Syst. Struct., 21, 1293 (2010). [DOI: https://doi.org/10.1177/1045389X09357971]
- H. C. Song, C. Y. Kang, S. J. Yoon, and D. Y. Jeong, Met. Mater. Int., 18, 499 (2012). [DOI: https://doi.org/10.1007/s12540-012-3018-y]
- M. A. Karami, O. Bilgen, D. J. Inman, and M. I. Friswell, IEEE Trans. Ultrason. Eng., 58, 1508 (2011). [DOI: https://doi.org/10.1109/TUFFC.2011.1969]
- S. Roundy and P. K. Wright, Smart Mater. Struct., 13, 1131 (2004) [DOI: https://doi.org/10.1088/0964-1726/13/5/018]
- D. Zhu, A. Almusallam, S. P. Beeby, J. Tudor, and N. R. Harris, Proc. PowerMEMS 2010 (PowerMEMS, Belgium, 2010) p. 335.