한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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유도성 기생성분에 의한 드레인전류 응답지연을 포함한 SOI MOSFET 고주파모델

Drain Current Response Delay High Frequency Model of SOI MOSFET with Inductive Parasitic Elements

  • 김규철 (목포해양대학교 해양메카트로닉스학부)
  • Kim, Gue-Chol (Division of Marine Mechatronics, Mokpo Maritime University)
  • 투고 : 2018.07.09
  • 심사 : 2018.10.15
  • 발행 : 2018.10.31
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초록

본 논문에서는 고주파에서 동작하는 공핍형 SOI MOSFET의 드레인 전류가 유도성 기생성분에 의해서 응답지연이 일어나는 것을 처음으로 확인하였다. 공핍형 SOI MOSFET는 드레인전압 변동에 따른 드레인전류의 응답지연이 발생하기 때문에 일반적인 MOSFET 고주파모델로는 해석할 수가 없다. 이러한 응답지연은 non-quasi-static 효과로 설명될 수 있으며 SOI MOSFET에서는 일반적인 MOSFET에 비해 유도성 기생성분에 의해 응답지연이 크게 발생하게 된다. 본 논문에서 제시한 고주파모델을 이용하여 공핍형 SOI MOSFET의 드레인 응답지연을 잘 표현하는지 확인한다.

In this paper, it was firstly confirmed that the drain current of the depleted SOI MOSFET operated in the high frequency response delay occurs by the inductive parasitic. Depleted SOI MOSFET cannot be applied as a conventional high-frequency MOSFET model because the response delay of the drain current is generated in accordance with the drain voltage fluctuation. This response delay may be described as a non-quasi-static effect, and the SOI MOSFET generated the response delay by the inductive parasitics compared to typical MOSFET. It is confirmed that depleted SOI MOSFET's RF characteristics can be well reproduced with the proposed method including the drain current response delay.

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참고문헌

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