Electronic Materials Letters

  • 제14권6호
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  • Pages.784-792
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  • 2018
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  • 1738-8090(pISSN)
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  • 2093-6788(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
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An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers

  • Das, Palash (Indian Institute of Technology Kharagpur) ;
  • Jana, Sanjay Kumar (Indian Institute of Technology Kharagpur) ;
  • Halder, Nripendra N. (Indian Institute of Technology Kharagpur) ;
  • Mallik, S. (National Institute of Science and Technology) ;
  • Mahato, S.S. (National Institute of Science and Technology) ;
  • Panda, A.K. (National Institute of Science and Technology) ;
  • Chow, Peter P. (SVT Associates) ;
  • Biswas, Dhrubes (Indian Institute of Technology Kharagpur)
  • 투고 : 2017.07.12
  • 심사 : 2018.04.12
  • 발행 : 2018.11.10
⟨ 이전 논문 다음 논문 ⟩

초록

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

키워드

참고문헌

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피인용 문헌

  1. Gate Architecture Effects on the Gate Leakage Characteristics of GaN Wrap-gate Nanowire Transistors vol.16, pp.5, 2018, https://doi.org/10.1007/s13391-020-00229-w