• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.1C
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• pp.47-55
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• 2003

This paper proposes a composition method of mosaic image from the compressed MPEG-2 video stream, in which the displacement between successive frames according to the camera operation is estimated directly from the information involved in the stream. In the proposed method. the approximated optical flow is constructed from motion vectors of macro blocks, and it is used to determine the parameters of the displacements according to the camera operation associated with pan and tilt. The extracted parameters are used to determine the geometric transform of successive video frames in order to construct a mosaic image. The construction of mosaic uses several blending techniques including the one proposed by Nichols in which an analytic weight is used to determine pixel values. Through the experiment, the blending technique based on analytic weights was superior to the others such as averaging and median-based techniques. It provided more smooth changes in background and made use of instantaneous frame information to construct a mosaic. The mosaic in the paper puts the emphasis on the reduction of computation because it is constructed from the motion vectors included in the compressed video without decoding and recalculating exact optical flows. The constructed mosaic can be used in the retrieval of the compressed video as the representative frame of a shot.

• Journal of information and communication convergence engineering
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• v.2 no.1
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• pp.52-57
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• 2004

In this paper, we propose a panorama-based object tracking scheme for wide-view surveillance systems that can detect and track moving objects with a pan-tilt camera. A dynamic mosaic of the background is progressively integrated in a single image using the camera motion information. For the camera motion estimation, we calculate affine motion parameters for each frame sequentially with respect to its previous frame. The camera motion is robustly estimated on the background by discriminating between background and foreground regions. The modified block-based motion estimation is used to separate the background region. Each moving object is segmented by image subtraction from the mosaic background. The proposed tracking system has demonstrated good performance for several test video sequences.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.43-46
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• 1997

High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.