Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Electrical Properties of TiO2 Thin Film and Junction Analysis of a Semiconductor Interface

  • Oh, Teresa (Department of Semiconductor, Cheongju University)
  • Received : 2018.08.30
  • Accepted : 2018.12.12
  • Published : 2018.12.31
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Abstract

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

Keywords

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Fig. 1. Mobility of TiO2 thin films with various annealing temperatures.

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Fig. 2. Resistance of TiO2 thin films with various annealing temperatures.

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Fig. 3. Carrier concentration of TiO2 thin films with various annealingtemperatures.

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Fig. 4. Mobility variation of TiO2 thin film that annealed at 150°C.

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Fig. 5. PL spectra of TiO2 thin films with various annealing temperatures. (a) 70°C, (b) 90°C, (c) 110°C, (d) 130oC, (e) 150°C, and (f) 170°C.

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Fig. 6. PL spectra of TiO2 thin film annealed at 90°C, 110°C, and 130°C. Fig. 4. Mobility variation of TiO2 thin film that annealed at 150°C.

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Fig. 7. Electrical characteristics of TiO2 thin films with various annealing temperatures. (a) Long range, (b) short range, and (c) TiO2 thin film that annealed at 110°C had the lowest current.

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Fig. 8. Electrical characteristics in the negative voltage.

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