마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제25권4호
  • /
  • Pages.101-104
  • /
  • 2018
  • /
  • 1226-9360(pISSN)
  • /
  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
권호 표지
DOI QR코드

DOI QR Code

Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films

  • Ko, Da-Yeong (Department of Materials Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
  • 투고 : 2018.11.28
  • 심사 : 2018.12.20
  • 발행 : 2018.12.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

키워드

MOKRBW_2018_v25n4_101_f0001.png 이미지

Fig. 1. Schematic diagrams illustrating the constitution of a JIC specimen used in this work.

MOKRBW_2018_v25n4_101_f0002.png 이미지

Fig. 2. Small-sized (20 mm × 20 mm) JIC crystallized samples on the 2nd generation glass substrate.

MOKRBW_2018_v25n4_101_f0003.png 이미지

Fig. 3. Raman spectra of JIC poly-Si produced under different processing conditions. (a) 600 V/cm for 15 μs (b) 700 V/ cm for 15 μs, (c) 750 V/cm for 15 μs.

MOKRBW_2018_v25n4_101_f0004.png 이미지

Fig. 4. In-situ, real-time measurement of voltages and currents for a pulsed electric input of 1050 V and 18 μs.

MOKRBW_2018_v25n4_101_f0005.png 이미지

Fig. 5. Bright-field TEM micrograph of the JIC poly-Si produced under different processing conditions. (a) 600 V/cm for 15 μs (b) 700 V/cm for 15 μs, (c) 750 V/cm for 15 μs.

MOKRBW_2018_v25n4_101_f0006.png 이미지

Fig. 6. JIC sample (a) before applying an electric field, and (b) after applying an electric field using the 2nd generation glass substrate. After applying an electric field the complete crystallization on the whole substrate area was successfully accomplished.

참고문헌

  1. S. C. Gong, and H. J. Chang, "The Properties of Polymer Light Emitting Diodes with ITO/PEDOT:PSS/MEH-PPV/Al Structure", J. Microelectron. Packag. Soc., 12, 213 (2005).
  2. A. T. Voutsas, and M. K. Hatalis, "Structure of As-Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures", J. Electrochem. Soc., 139, 2659 (1992). https://doi.org/10.1149/1.2221280
  3. R. S. Wagner, and W. C. Ellis, "Vapor-Liquid-Solid mechanism of single crystal growth", Appl. Phys. Lett., 4, 89 (1964). https://doi.org/10.1063/1.1753975
  4. S.-W. Lee, and S.-K. Joo, "Low temperature poly-Si thin film transistor fabrication by metal induced lateral crystallization", IEEE Electron Dev. Lett., 17, 160 (1996). https://doi.org/10.1109/55.485160
  5. J. S. Im, H. J. Kim, and M. O. Thompson, "Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films", Appl. Phys. Lett., 63, 2969 (1993).
  6. J.-S. Ro, and W.-E. Hong, "Millisecond Crystallization of amorphous silicon film using Joule heating", SID 2006 Digest of Technical Papers, 1280 (2006).
  7. W. E. Hong, and J. S. Ro, "Millisecond crystallization of amorphous silicon films by Joule-heating induced crystallization using a conductive layer", Thin Solid Films, 515, 5357 (2007). https://doi.org/10.1016/j.tsf.2007.01.028
  8. K.-Y. Lee, H. J. Won, S. W. Jun, T.-S. Oh, J.-Y. Byun, and T.-S. Oh, "Electrical resistivity in solder-reaction characteristics of Ni films fabricated by electroplating", J. Microelectron. Packag. Soc., 12, 253 (2005).