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Averaging Current Adjustment Technique for Reducing Pixel Resistance Variation in a Bolometer-Type Uncooled Infrared Image Sensor

  • Kim, Sang-Hwan (School of Electronics Engineering, Kyungpook National Unversity) ;
  • Choi, Byoung-Soo (School of Electronics Engineering, Kyungpook National Unversity) ;
  • Lee, Jimin (School of Electronics Engineering, Kyungpook National Unversity) ;
  • Lee, Junwoo (School of Electronics Engineering, Kyungpook National Unversity) ;
  • Park, Jae-Hyoun (Korea Electronics Technology Institute) ;
  • Lee, Kyoung-Il (Korea Electronics Technology Institute) ;
  • Shin, Jang-Kyoo (School of Electronics Engineering, Kyungpook National Unversity)
  • Received : 2018.09.10
  • Accepted : 2018.11.21
  • Published : 2018.11.30

Abstract

This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

Keywords

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Fig. 1. Circuit diagram of unit pixel.

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Fig. 2. Block diagram of averaging current adjustment technique using reference pixel array.

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Fig. 3. Layout of designed readout circuit.

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Fig. 4. (a) Block diagram of entire chip and (b) timing diagram of entire chip.

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Fig. 6. Measurement result of pixel output voltage through integrator: (a) before calibration and (b) after calibration.

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Fig. 5. Simulation result of pixel output voltage through integrator: (a) before calibration and (b) after calibration.

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Fig. 7. (a) Fabricated chip and (b) test board.

References

  1. R. Mendez-Rial, A. Souto-Lopez, J. Rodriguez-Garcia, J. Rodriguez-Araujo, and A. Garcia-Diaz, "A high-speed MWIR uncooled multi-aperture snapshot spectral imager for IR surveillance and monitoring," 2016 IEEE Int. Conf. Imaging Syst. Tech. Proc., pp. 206-210, 2016.
  2. N. Shen, J. Yu, and Z. Tang, "An uncooled infrared microbolometer array for low-cost applications," IEEE Photonics Technol. Lett., Vol. 27, No. 12, pp. 1247-1249, 2015. https://doi.org/10.1109/LPT.2015.2413676
  3. M. Ahmed, D. P. Butler, and Z. Celik-Butler, "Low-profile, self-packaged uncooled microbolometer on a flexible substrate towards an infrared radiation sensitive skin," Proc. IEEE Sensors, pp. 2155-2158, 2014.
  4. T. Hatagaki, S. Kumagai, K. C. Park, and M. Sasaki, "Uncooled Infrared Sensor Using Torsional Resonator and Electrostatic Detection," 2017 Int. Conf. Opt. MEMS Nanophotonics, pp. 1-2, 2017.
  5. B. Dupont, A. Dupret, E. Belhaire, and P. Villard, "FPN sources in bolometric infrared detectors," IEEE Sens. J., Vol. 9, No. 8, pp. 944-952, 2009. https://doi.org/10.1109/JSEN.2009.2024041
  6. S. Park, T. Cho, M. Kim, H. Park, and K. Lee, "A shutterless micro-bolometer thermal imaging system using multiple digital correlated double sampling for mobile applications," IEEE Symp. VLSI Circuits, Dig. Tech. Pap., pp. C154-C155, 2017.
  7. M. Kim, S. Park, K. Lee, and H. Yoo, "Uncooled Infrared Micro-Bolometer FPA for Multiple Digital Correlated Double Sampling," IEEE Photonics Technol. Lett., Vol. 1135, No. 6, pp. 517-520, 2018.
  8. M. -W. Seo, K. Kagawa, K. Yasutomi, Y. Kawata, N. Teranishi, Z. Li, I. A. Halin, and S. Kawahito, "A 10 ps timeresolution CMOS image sensor with two-tap true-CDS lock-in pixels for fluorescence lifetime imaging," IEEE J. Solid-State Circuits, Vol. 51, No. 1, pp. 141-154, 2016. https://doi.org/10.1109/JSSC.2015.2496788
  9. M. -W. Seo, S. H. Suh, T. Iida, T. Takasawa, K. Isobe, T. Watanabe, S. Itoh, K. Yasutomi, and S. Kawahito, "A lownoise high intrascene dynamic range CMOS image sensor with a 13 to 19b variable-resolution column-parallel folding- integration/cyclic ADC," IEEE J. Solid-State Circuits, Vol. 47, No. 1, pp. 272-283, 2012. https://doi.org/10.1109/JSSC.2011.2164298
  10. H. -J. Kim, S. -I. Hwang, J. -W. Kwon, D. -H. Jin, B. -S. Choi, S. -G. Lee, J. -H. Park, J. -K. Shin, and S. -T. Ryu, "A delta-readout scheme for low-power CMOS image sensors with multi-column-parallel," IEEE J. Solid-State Circuits, Vol. 51, No. 10, pp. 2262-2273, 2016. https://doi.org/10.1109/JSSC.2016.2581819
  11. Y. Nitta, Y. Muramatsu, K. Amano, T. Toyama, J. Yamamoto, K. Mishina, A. Suzuki, T. Taura, a. Kato, M. Kikuchi, Y. Yasui, H. Nomura, and N. Fukushima, "High-speed digital double sampling with analog CDS on column parallel ADC architecture for low-noise active pixel sensor," 2006 IEEE Int. Solid State Circuits Conf., pp. 304-305, 2006.
  12. P. Payandehnia, H. Maghami, X. Meng, G. C. Temes, and H. Yoshizawa, "Sequential interstage correlated double sampling: A switched-capacitor technique for high accuracy systems," Midwest Symp. Circuits Syst., pp. 262-265, 2014.
  13. S. Kim, B. Choi, J. Lee, C. Oh, J. Shin, J. Park, and K. Lee, "Bolometer-type uncooled infrared image sensor using pixel current calibration technique," J. Sens. Sci. Technol., Vol. 25, No. 5, pp. 349-353, 2016. https://doi.org/10.5369/JSST.2016.25.5.349