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Effects of Temperature on Removal Rate in Cu CMP

Cu CMP에서 온도가 재료 제거율에 미치는 영향

  • 박인호 (부산대학교 대학원 기계공학과 정밀가공시스템) ;
  • 이다솔 (부산대학교 대학원 기계공학과 정밀가공시스템) ;
  • 정선호 (부산대학교 대학원 기계공학과 정밀가공시스템) ;
  • 정해도 (부산대학교 대학원 기계공학과 정밀가공시스템)
  • Received : 2018.07.16
  • Accepted : 2018.11.11
  • Published : 2018.12.31

Abstract

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.

Keywords

References

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