반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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InSb 중적외선 검출기의 Flat-band 전압과 양자효율의 상관관계

Relation Between Flat-band Voltage and Quantum Efficiency of InSb MWIR Detector

  • 투고 : 2018.05.09
  • 심사 : 2018.06.20
  • 발행 : 2018.06.30
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초록

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

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참고문헌

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