ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
권호 표지
DOI QR코드

DOI QR Code

6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

  • Shin, Dong-Hwan (Broadcasting & Media Research Laboratory, ETRI) ;
  • Yom, In-Bok (Broadcasting & Media Research Laboratory, ETRI) ;
  • Kim, Dong-Wook (Department of Radio Science and Engineering, Chungnam National University)
  • Received : 2016.10.14
  • Accepted : 2017.08.07
  • Published : 2017.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

A 6-GHz-to-18-GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a $0.25-{\mu}m$ AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power-added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse-mode condition of a $100-{\mu}s$ pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.

Keywords

References

  1. D. Runton et al., "History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond," IEEE Microw. Mag., vol. 14, no. 3, May 2013, pp. 82-466. https://doi.org/10.1109/MMM.2013.2240853
  2. G.D. Vendelin, A.M. Pavio, and U.L. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, Hoboken, NJ, USA: Wiley, 2005.
  3. R. Pengelly et al., "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs," IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, June 2013, pp. 1764-1783. https://doi.org/10.1109/TMTT.2012.2187535
  4. D.W. Kim, "An Output Matching Technique for a GaN Distributed Power Amplifier MMIC Using Tapered Drain Shunt Capacitors," IEEE Microw. Wireless. Compon. Lett., vol. 25, no. 9, Sept. 2015, pp. 603-605. https://doi.org/10.1109/LMWC.2015.2451351
  5. N. Kumar and A. Grebennikov, Distributed Power Amplifiers for RF and Microwave Communications, Boston, MA, USA: Artech House, 2015.
  6. UMS, GH25-10 User Guide for the DK 3.1, ver. 3.1, Jan. 2014.
  7. K.H. Yeom, Microwave Circuit Design - A Practical Approach Using ADS, New York, USA: Prentice Hall, 2015.
  8. J. Beyer et al., "MESFET Distributed Amplifier Design Guidelines," IEEE Trans. Microw. Theory Tech., vol. MTT-32, no. 3, Mar. 1984, pp. 268-275. https://doi.org/10.1109/TMTT.1984.1132664
  9. C. Duperrier et al., "New Design Method of Uniform and Nonuniform Distributed Power Amplifiers," IEEE Trans. Microw. Theory Tech., vol. 49, no. 12, Dec. 2001, pp. 2494-2500. https://doi.org/10.1109/22.971641
  10. C. Campbell et al., "A Wideband Power Amplifier MMIC utilizing GaN on SiC HEMT Technology," IEEE J. Solid-State Circuits, vol. 44, no. 10, Oct. 2009, pp. 2640-2647. https://doi.org/10.1109/JSSC.2009.2026824
  11. J.C. Jeong et al., "An AlGaN/GaN Based Ultra-Wideband 15-W High-Power Amplifier with Improved Return Loss," ETRI J., vol. 38, no. 5, Oct. 2016, pp. 972-980. https://doi.org/10.4218/etrij.16.2615.0020
  12. G. Mouginot et al., "Three Stage 6-18 GHz High Gain and High Power Amplifier Based on GaN Technology," IEEE Int. Microw. Symp. Digest, Anaheim, CA, USA, May 23-28, 2010, pp. 1392-1395.
  13. U. Schmid et al., "Ultra-Wideband GaN MMIC Chip Set and High Power Amplifier Module for Multi-Function Defense AESA Applications," IEEE Trans. Microw. Theory Tech., vol. 61, no. 8, Aug. 2013, pp. 3043-3051. https://doi.org/10.1109/TMTT.2013.2268055
  14. S. Masuda et al., "Over 10W C-Ku Band GaN MMIC Non-Uniform Distributed Power Amplifier With Broadband Couplers," IEEE Int. Microw. Symp. Digest, Anaheim, CA, USA, May 23-28, 2010, pp. 1388-1391.
  15. J. Kim et al., "6-18 GHz, 8.1 W Size-Efficient GaN Distributed Amplifier MMIC," Electron. Lett., vol. 52, no. 8, Apr. 2016, pp. 622-624. https://doi.org/10.1049/el.2015.3727

Cited by

  1. A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling vol.66, pp.6, 2017, https://doi.org/10.1109/tmtt.2018.2817521
  2. Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells vol.9, pp.12, 2018, https://doi.org/10.3390/mi9120619
  3. Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique vol.18, pp.19, 2017, https://doi.org/10.1587/elex.18.20210313