Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Implementation of a Radiation-hardened I-gate n-MOSFET and Analysis of its TID(Total Ionizing Dose) Effects

  • Lee, Min-Woong (Dept. of Nuclear convergence technology, Korea Atomic Energy Research Institute) ;
  • Lee, Nam-Ho (Dept. of Nuclear convergence technology, Korea Atomic Energy Research Institute) ;
  • Jeong, Sang-Hun (Dept. of Nuclear convergence technology, Korea Atomic Energy Research Institute) ;
  • Kim, Sung-Mi (Dept. of Electronic Engineering, Chonbuk National University) ;
  • Cho, Seong-Ik (Dept. of Electronic Engineering, Chonbuk National University)
  • Received : 2016.08.30
  • Accepted : 2017.04.14
  • Published : 2017.07.01
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Abstract

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

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References

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