Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching

  • Lee, Woongkul (Electrical and Computer Eng., University of Wisconsin - Madison) ;
  • Han, Di (Electrical and Computer Eng., University of Wisconsin - Madison) ;
  • Morris, Casey T. (Electrical and Computer Eng., University of Wisconsin - Madison) ;
  • Sarlioglu, Bulent (Electrical and Computer Eng., University of Wisconsin - Madison)
  • Received : 2016.09.09
  • Accepted : 2017.01.25
  • Published : 2017.05.20
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Abstract

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

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References

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