JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2

  • Jo, Yoo Jin (Department of Advanced Materials Engineering, Hanyang University) ;
  • Moon, Jeong Hyun (Power Semiconductor Research Center, High Voltage Direct Current Research Division, Korea Electrotechnology Research Institute) ;
  • Seok, Ogyun (Power Semiconductor Research Center, High Voltage Direct Current Research Division, Korea Electrotechnology Research Institute) ;
  • Bahng, Wook (Power Semiconductor Research Center, High Voltage Direct Current Research Division, Korea Electrotechnology Research Institute) ;
  • Park, Tae Joo (Department of Advanced Materials Engineering, Hanyang University) ;
  • Ha, Min-Woo (Department of Electrical Engineering, Myongji University)
  • Received : 2016.08.25
  • Accepted : 2016.11.08
  • Published : 2017.04.30
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Abstract

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

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References

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