References
- W. Y. Choi, B. G. Park, J. D. Lee and T. J. K. Liu, "Tunneling Field-Effect Transistors (TFETs) with Subthreshold Swing (SS) Less Than 60 mV/dec," IEEE Electron Device Letters, vol. 28, no. 8, pp.743-745, 2007. https://doi.org/10.1109/LED.2007.901273
- A. M. Ionescu, H. Riel, "Tunnel field-effect transistors as energy-efficient electronic switches," Nature, vol. 479, no. 7373, pp.329-337, 2011. https://doi.org/10.1038/nature10679
- W. G. Vandenberghe, A. S. Verhulst, B. Soree, W. Magnus, Guido Groeseneken, Q. Smets, M. Heyns, and M. V. Fischetti, "Figure of merit for and identification of sub-60mV/decade devices," Applied Physics Letters, vol. 102, no. 1, pp.013510, 2013. https://doi.org/10.1063/1.4773521
- W. Cao, D. Sarkar, Y. Khatami, J. Kang, and K. Banerjee, "Subthreshold-swing physics of tunnel field-effect transistors," AIP Advances, vol. 4, no. 6, 2014.
- U. E. Avci, D. H. Morris, and I. A. Young, "Tunnel Field-Effect Transistors: Prospects and Challenges," Journal of the Electron Device Society, vol. 3, no. 3, pp.88-95. 2015. https://doi.org/10.1109/JEDS.2015.2390591
- J. Knoch, S. Mantl, J. Appenzeller, "Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices," Solid-State Electronics, vol. 51, no. 4, pp.572-578, 2007. https://doi.org/10.1016/j.sse.2007.02.001
- K. Ganapathi, Y. Yoon, and S. Salahuddin, "Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance," Applied Physics Letters, vol. 97, no. 3, 2010.
- L. D. Michielis, A. M. Ionescu "Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current," Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011.
- S. W. Kim, J. H. Kim, T. J. K. Liu, W. Y. Choi, and B. G. Park, "Demonstration of L-Shaped Tunnel Field-Effect Transistors," IEEE Transactions on Electron Devices. vol. 63, no. 4, pp.1774-1778. 2016. https://doi.org/10.1109/TED.2015.2472496
- C. Alper, P. Palestri, J. L. Padilla, A. M. Ionescu, "The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization," IEEE Transactions on Electron Devices, vol. 64, no. 6, 2016.
- Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, T.Matsukawa, K. Endo, S. O'uchi, Y. X. Liu, M. Masahara, and H. Ota, "Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes," Japanese Journal of Applied Physics, vol. 52, no. 4S, p.04CC25, 2013. https://doi.org/10.7567/JJAP.52.04CC25
- Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, M. Masahara, and H. Ota, "Performance Limit of Parallel Electric Field Tunnel FET and Improvement by Modified Gate and Channel Configurations," IEEE Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013.
- Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, T. Matsukawa, K. Endo, S. O'uchi, Y. X. Liu, M. Masahara, and H. Ota, "Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect," IEEE Electron Device Letters, vol. 35, no. 7, 2014.
- Sentaurus Device User Guide Version: H-2013.03, Synopsys Inc., Mountain View, CA, USA, 2013.
- K-. H Kao, A. S. Verhulst, W. G. Vandenberghe, B. Soree, G. Groeseneken, and K. D. Meyer, "Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs", IEEE Transactions on Electron Devices, vol. 59, no. 2, 2012.
- S. K. Kim, W. Y. Choi, "Impact of gate dielectric constant variation on tunnel field-effect transistors (TFETs)," Solid-State Electronics, vol. 116, pp.88-94, 2016. https://doi.org/10.1016/j.sse.2015.11.037
- S. W. Kim, W. Y. Choi, M. C. Sun, and B. G. Park, "Investigation on the Corner Effect of L-Shaped Tunneling Field-Effect Transistors and Their Fabrication Method", Journal of Nanoscience and Nanotechnology, vol. 13, no. 9, 2013.