Applied Microscopy

Korean Society of Microscopy (한국현미경학회)
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Understanding the Growth Kinetics of Graphene on Cu and Fe2O3 Using Inductively-Coupled Plasma Chemical Vapor Deposition

  • Van Nang, Lam (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Dong-Ok (Department of Materials Science and Engineering, Chungnam National University) ;
  • Trung, Tran Nam (Department of Materials Science and Engineering, Chungnam National University) ;
  • Arepalli, Vinaya Kumar (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Eui-Tae (Department of Materials Science and Engineering, Chungnam National University)
  • Received : 2015.09.21
  • Accepted : 2015.09.30
  • Published : 2017.03.30
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Abstract

High-quality graphene was synthesized on Cu foil and $Fe_2O_3$ film using $CH_4$ gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on $Fe_2O_3$ at a temperature as low as $700^{\circ}C$. Few-layer graphene was formed within a few seconds and 1 min on Cu and $Fe_2O_3$, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.

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References

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