전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제65권10호
  • /
  • Pages.1697-1701
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  • 2016
  • /
  • 1975-8359(pISSN)
  • /
  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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Sb2O3 첨가제가 ZnO 배리스터의 전기적 특성에 미치는 영향

The Effect of Sb2O3 Additive on the Electrical Properties of ZnO Varistor

  • 투고 : 2016.08.08
  • 심사 : 2016.09.05
  • 발행 : 2016.10.01
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초록

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

키워드

참고문헌

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