Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Structural and Optical Properties of HfO2 Films on Sapphire Annealed in O2 Ambient

  • Park, Jong-Chan (Department of Electronic Engineering, Inha University) ;
  • Yoon, Yung-Sup (Department of Electronic Engineering, Inha University) ;
  • Kang, Seong-Jun (Department of Electrical and Semiconductor Engineering, Chonnam National University)
  • Received : 2016.07.12
  • Accepted : 2016.08.24
  • Published : 2016.09.30
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Abstract

The structural properties of $HfO_2$ films could be improved by thermal treatment owing to their crystallization. We deposited $HfO_2$ films on sapphire by radio frequency (RF) magnetron sputtering, whose base vacuum pressure was lower than $4.5{\times}10^{-6}$ Pa, RF power was 100 W, working temperature was $200^{\circ}C$, working pressure was 3 mTorr, and the density of the active gas (Argon) was 20 sccm. After depositing the $HfO_2$ films, the samples were thermally treated by rapid thermal annealing (RTA) in $O_2$ ambient at different temperatures. Subsequently, the measured physical properties (structural, morphological, and optical) indicated that the crystallite size, refractive index at a wavelength of 632 nm, and packing density increased with rising temperatures. In particular, an $HfO_2$ film thermally treated at $800^{\circ}C$ in $O_2$ ambient had the highest refractive index of 2.0237 and packing density of 0.9638. The relation between optical and structural properties was also analyzed.

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