Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Study on Optimization of the P-region of 4H-SiC MPS Diode

4H-SiC MPS 다이오드의 P 영역 최적화에 관한 연구

  • Jung, Se-Woong (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Ki-Hwan (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, So-Mang (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • Park, Sung-Joon (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Dept. of Electronic Materials Engineering, Kwangwoon University)
  • Received : 2016.04.26
  • Accepted : 2016.06.01
  • Published : 2016.06.30
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Abstract

In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga's Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.

탄화규소(Silicon Carbide) 기반의 1200 V급 Merged Pin Schottky(MPS) 다이오드의 구조를 2D-atlas simulation tool을 사용하여 최적화 및 설계하였다. 최적화된 항복전압과 온-저항 값을 얻기 위해 본 소자에서 중요한 파라미터인 P-Grid의 도핑농도와 에피층의 도핑농도를 각각 $2{\sim}10{\times}10^{17}cm^{-3}$, $2{\sim}10{\times}10^{16}cm^{-3}$으로 변화시키면서 소자의 전기적 특성을 분석하였으며, 그 후 P-Grid의 Space값을 $1{\sim}5{\mu}m$로 설계하여 이에 따른 항복전압과 온-저항의 값을 확인하였다. 항복전압과 온-저항은 서로 trade-off 관계에 있기 때문에 각 변수에서 도출된 값들을 Baliga's Figure Of Merit (BFOM)식에 대입하여 비교하였다. 그 결과 고전압 소자에 적용 가능한 1200 V급 4H-SiC MPS다이오드를 최적화 및 설계를 도출하였다.

Keywords

References

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