DOI QR코드

DOI QR Code

Annealing Effect on controlling Self-Organized Ag/Ti Nanoparticles on 4H-SiC Substrate

4H-SiC기판 위의 자기구조화된 Ag/Ti 나노입자 제어를 위한 열처리 분석

  • Kim, So-Mang (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • OH, Jong-Min (Dept. of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Dept. of Electronic Materials Engineering, Kwangwoon University)
  • Received : 2016.04.26
  • Accepted : 2016.06.23
  • Published : 2016.06.30

Abstract

The effect of varying thickness of Ag/Ti metal bilayer and annealing time have investigated for controlling self-organized nanoparticles (NPs) on 4H-SiC substrate. In addition, Glass and Si substrate which have different surface energy from SiC were fabricated for analyzing interaction of agglomeration. The results of FE-SEM indicated the different formation behaviors of NPs in various ranges of fabrication condition. The surface energy was measured by using a Contact Angle Analyzer. The formation of network-like NPs was observed on Glass and 4H-SiC, respectively, whereas it was not the case on Si substrates. It has been found that the size of NPs increases with decreasing surface energy, due to particle size-dependent hydrophilic properties of substrates. The different formation behavior was explained by using Young's equation for the contact angles between the metal and different substrates.

본 연구에서는 4H-SiC(0001)기판 위에서 형성되는 나노구조화를 제어하기 위해 상지층과 하지층으로 구성된 이중층 금속을 증착하고 두께, 열처리 시간을 변화하였다. 또한 표면에너지와 응집현상의 상관관계를 분석하기 위해 SiC와는 다른 표면에너지를 갖는 Glass와 Si기판에도 같은 조건으로 실험하였다. FE-SEM을 통하여 금속이 나노구조화를 형성하는 두께가 Ag=20nm, Ti=2nm임을 확인 했으며 두께가 두꺼울 수록 나노 입자가 형성되지 않았다. 세기판의 표면에너지를 구하기 위해 접촉각 측정기를 통해 정접촉각법으로 측정하였다. 그 결과 표면에너지 값이 가장 높은 Glass(53.89 mN/m) 기판에서 나노 입자가 가장 고르게 분포된 형태를 보였으며 SiC(41.13 mN/m)에서 나노구조화 되는 양상을 보였고, Si(32.96 mN/m)에서는 NPs 형성이 되지 않았다. 표면에너지가 작을수록 나노 입자형성이 고르게 분포되는 현상을 Young equation으로 분석하였다.

Keywords

References

  1. Liu X, Luo Z, Han S, Tang T and Zhang C "Band engineering of carbon nanotube field-effect transistors via selected area chemical gating", Appl Phys Lett, vol.86, no.24, 2005
  2. Mohit Bhatnagar and B. Jayant Baliga, "Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices", IEEE Transactions on Electron devices, vol.40, no.3, March 1993
  3. Rongchao Jin, Guosheng Wu, Zhi Li, Chad A. Mirkin, and George C. Schatz, "What controls the melting properties of DNA-Linked Gold Nanoparticle Assemblies?", J. AM. CHEM. SOC., vol.125, no.6, 2003
  4. Trent H. Galow, Ulf Drechsler, Jarrod A. Hanson and Vincent M. Rotello, Highly reactive heterogeneous Heck and hydrogenation catalysts constructed through bottom-up nanoparticle self-assembly, Chemical Communications, 2002
  5. Taeseop Lee and Sang Mo Koo, "Electrical characteristics of 4H-SiC MIS Capacitors With Ni/CNT/SiO2 Structure", IKEEE, vol.18, no.4, 2014