반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

RF magnetron sputtering으로 증착한 IGZO 박막의 RF power에 따른 구조적, 광학적 및 전기적 특성 연구

The Structures, Optical and Electrical Properties of IGZO Thin Films by RF Magnetron Sputtering According to RF Power

  • 연제호 (청주대학교 대학원 반도체공학과) ;
  • 김홍배 (청주대학교 이공대학 반도체공학과)
  • Yeon, Je ho (Department of Semiconductor Engineering, Cheongju University) ;
  • Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2016.09.01
  • 심사 : 2016.09.22
  • 발행 : 2016.09.30
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초록

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

키워드

참고문헌

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