한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제53권6호
  • /
  • Pages.700-706
  • /
  • 2016
  • /
  • 1229-7801(pISSN)
  • /
  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
권호 표지
DOI QR코드

DOI QR Code

Characteristics of Carbon Tetrafluoride Plasma Resistance of Various Glasses

  • Choi, Jae Ho (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Han, Yoon Soo (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Sung Min (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Park, Hyung Bin (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Sung Churl (Department of Materials Science and Engineering, Hanyang University) ;
  • Kim, Hyeong Jun (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology)
  • 투고 : 2016.09.30
  • 심사 : 2016.11.22
  • 발행 : 2016.11.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

키워드

참고문헌

  1. S. Aachboun and P. Ranson, "Deep Anisotropic Etching of Silicon," J. Vac. Sci. Technol. A, 17 2270-73 (1999). https://doi.org/10.1116/1.581759
  2. G. S. Oehrlein and Y. Kurogi, "Sidewall Surface Chemistry in Directional Etching Processes," Mater. Sci. Eng. R, 24 [4] 153-83 (1998). https://doi.org/10.1016/S0927-796X(98)00016-3
  3. C. Cardinaud, M. C. Peignon, and P. Y. Tessier, "Plasma Etching: Principles, Mechanisms, Application to Micro- and Nano-technologies," Appl. Surf. Sci., 164 [1-4] 72-83 (2000). https://doi.org/10.1016/S0169-4332(00)00328-7
  4. R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, "Microscopic Uniformity in Plasma Etching," J. Vac. Sci. Technol. B, 10 2133-47 (1992). https://doi.org/10.1116/1.586180
  5. N. Ito, T. Moriya, F. Uesugi, M. Matsumoto, S. Liu, and Y. Kitayama, "Reduction of Particle Contamination in Plasma-Etching Equipment by Dehydration of Chamber Wall," Jap. J. Appl. Phys., 47 3630-34 (2008). https://doi.org/10.1143/JJAP.47.3630
  6. D. M. Kim, K. B. Kim, S. Yoon, Y. S. Oh, H. T. Kim, and S. M. Lee, "Effects of Artificial Pores and Purity on the Erosion Behaviors of Polycrystalline $Al_2O_3$ Ceramics under Fluorine Plasma," J. Ceram. Soc. Jpn., 117 863-67 (2009). https://doi.org/10.2109/jcersj2.117.863
  7. R. Ramos, G. Cunge, B. Pelissier, and O. Joubert, "Cleaning Aluminum Fluoride Coatings from Plasma Reactor Walls in $SiCl_4/Cl_2$ Plasmas," Plasma Sources Sci. Technol., 16 [4] 711-15 (2007). https://doi.org/10.1088/0963-0252/16/4/004
  8. A.Miyazaki, K. Morita, S. Nagasaka, and S. Moriya, "Plasma-resistant Member and Plasma Treatment Apparatus Using the Same", US patent 6834613 (August 24, 1999).
  9. K. Morita, H. Ueno and H. Murayama, "Plasma-resistant Articles and Production Method Thereof", US patent 6933254 (November 19, 2002).
  10. K. Miwa, T. Sawai, M. Aoyama, F. Inoue, A. Oikawa, and K. Imaoka, "Particle Reduction using $Y_2O_3$ Material in an Etching Tool,"; pp. 479-482 in IEEE Int. Symp. Semicond. Manuf. Confer. Proc., San Jose, CA, 2005.
  11. B. R. Chrcanovic, N. L. C. Leao, and M. D. Martins, "Influence of Different Acid Etchings on the Superficial Characteristics of Ti Sandblasted with $Al_2O_3$," Mater. Res., 16 [5] 1006-1014 (2013). https://doi.org/10.1590/S1516-14392013005000067
  12. J. Q. Dai, Y. H. Z. P. Xie, X. L. Xu, and J. L. Yang, "Effect of Acid Cleaning and Calcination on Rheological Properties of Concentrated Aqueous Suspensions of Silicon Nitride Powder," J. Am. Ceram. Soc., 85 [2] 293-98 (2002). https://doi.org/10.1111/j.1151-2916.2002.tb00087.x
  13. J. Lee, D. Kim, S. Lee, and H. Kim, "Effect of Rare-earth Elements on the Plasma Etching Behavior of the RE-Si-Al-O Glasses," J. Non-Cryst. Solids, 358 898-902 (2012). https://doi.org/10.1016/j.jnoncrysol.2011.12.082
  14. Z. Chabbou1 and S. Aqdim, "Chemical Durability and Structural Proprieties of the Vitreous Part of the System $xCaO-(40-x)ZnO-15Na_2O-45P_2O_5$," Adv. Mater. Phys. Chem., 4 [10] 179-86 (2014). https://doi.org/10.4236/ampc.2014.410021
  15. R. J. Eagan and J. C. Swearekgen, "Effect of Composition on the Mechanical Properties of Aluminosilicate and Borosilicate Glasses," J. Am. Ceram. Soc., 61 27-30 (1978). https://doi.org/10.1111/j.1151-2916.1978.tb09222.x
  16. M. J. Hyatt and D. E. Day, "Glass Properties in the Yttria-Alumina-Silica System," J. Am. Ceram. Soc., 70 [10] C283-87 (1987).
  17. K. Nojiri, Dry Etching Technology for Semiconductors; pp. 16, Springer, Switzerland, 2015.
  18. D. M. Manos and D. L. Flamm, Plasma etching an introduction; pp. 129-30, Academic press, INC., 1989.
  19. D. L. Flamm, V. M. Donnelly, and D. E. Ibbotson, "Basic Chemistry and Mechanisms of Plasma Etching," J. Vac. Sci. Technol. B, 1 23-30 (1983)
  20. D. Shamiryan , M. Baklanov , M. Claes , W. Boullart, and V. Paraschiv, "Selective Removal of High-k Gate Dielectrics," Chem. Eng. Commun., 196 [12] 1475-535 (2009). https://doi.org/10.1080/00986440903155428
  21. J. D. B. Bradley, F. Ay, K. Worhoff, and M. Pollnau, "Fabrication of Low-loss Channel Waveguides in $Al_2O_3$ and $Y_2O_3$ Layers by Inductively Coupled Plasma Reactive Ion Etching," Appl. Phys. B, 89 311-18 (2007). https://doi.org/10.1007/s00340-007-2815-3
  22. P. Patnaik, Handbook of Inorganic Chemicals; pp. 304-6, McGraw-Hill, 2002.
  23. P. Y. Shin and T. S. Chin, "Preparation of Lead-free Phosphate Glasses with Low $T_g$ and Excellent Chemical Durability," J. Mater. Sci. Lett., 20 1811-13 (2001). https://doi.org/10.1023/A:1012551603964
  24. M. I. Ojovan, "Configurons: Thermodynamic Parameters and Symmetry Changes at Glass Transition," Entropy, 10 334-64 (2008). https://doi.org/10.3390/e10030334
  25. B. W. Kim and B. T. Lee, "Relationships Between Etch Rate and Roughness of Plasma Etched Surface," IEEE Trans. Plasma Sci., 30 [5] 2074-77 (2002). https://doi.org/10.1109/TPS.2002.807497
  26. S. T. Tos and J. A. Pask, "Reaction of Glasses with Hydrofluoric Acid Solution," J. Am. Ceram. Soc., 65 [7] 360-62 (1982). https://doi.org/10.1111/j.1151-2916.1982.tb10471.x
  27. G. A. C. M. Spierings, "Wet Chemical Etching of Silicate Glasses in Hydrofluoric Acid Based Solutions," J. Mat. Sci., 28 6261-73 (1993). https://doi.org/10.1007/BF01352182
  28. H. Aoki, S. Tokuyama, T. Sasada, D. Watanabe, M. K. Mazumder, C. Kimura, and T. Sugino, "Dry Etching Properties of Boron Carbon Nitride (BCN) Films Using Carbon Fluoride Gas," Diam. Relat. Mater., 17 1800-4 (2008). https://doi.org/10.1016/j.diamond.2008.01.062

피인용 문헌

  1. Effect of CaF2 on fluorocarbon plasma resistance and thermal properties of CaO-Al2O3-SiO2 glasses vol.9, pp.1, 2016, https://doi.org/10.1080/21870764.2020.1868079