Journal of Electrical Engineering and Technology

  • 제11권6호
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  • Pages.1763-1768
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  • 2016
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  • 1975-0102(pISSN)
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  • 2093-7423(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

  • Kang, Hye Su (School of Electronics Engineering, Kyungpook National University) ;
  • Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University) ;
  • Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University) ;
  • Cho, Min Su (School of Electronics Engineering, Kyungpook National University) ;
  • Kang, In Man (School of Electronics Engineering, Kyungpook National University)
  • 투고 : 2015.11.12
  • 심사 : 2016.05.19
  • 발행 : 2016.11.01
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초록

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

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참고문헌

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