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피인용 문헌
- Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device vol.16, pp.2, 2016, https://doi.org/10.5573/JSTS.2016.16.2.147
- Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell vol.E99.C, pp.5, 2016, https://doi.org/10.1587/transele.E99.C.547
- Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier vol.8, pp.2041-1723, 2017, https://doi.org/10.1038/ncomms15217