반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Al2O3/Si/Al2O3구조를 이용한 실리콘태양전지 제작 및 특성

Fabrication and Properties of Silicon Solar Cells using Al2O3/Si/Al2O3 Structures

  • 김광호 (청주대학교 태양광에너지공학과)
  • Kim, Kwang-Ho (Department of Solar Energy and Engineering, Cheongju University)
  • 투고 : 2015.11.25
  • 심사 : 2015.12.21
  • 발행 : 2015.12.31
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초록

Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

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참고문헌

  1. Shockley, W. and Queisser, Hans J., "Detailed Balance Limit of Efficiency of p-n Junction Solar Cells", J. of Applied Physics, Vol. 32, pp. 510-519, (1961). https://doi.org/10.1063/1.1736034
  2. Green, M. A., "Solar Cells: operating principles, technology and system applications", Englewood Cliffs, New Jersey: Prentice-Hall, (1982)
  3. Green, M. A., "Third Generation Photovoltaics: Advanced Solar Energy Conversion", Berlin Heidelberg: Springer-Verlag, (2003).
  4. Kim, K. -H., "Quantum well-structured solar cells and method for manufacturing same", Korean Patent No. 10-1461602, (2014. 11. 07).
  5. Kim, K. -H., "Fabrication and Properties of Si Films by using DIPAS Source", J. of Korean Inst. of Inform. Technol., Vol. 12, pp. 25-30, (2014).
  6. Yun, H. S. and Kim, K. -H., "Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited $Al_2O_3$ Gate Dielectric", J. Korean Phys. Soc., Vol. 54, pp. 707-711, (2009). https://doi.org/10.3938/jkps.54.707
  7. Werner, K. and Puotinen, D. A., "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology", RCA Review, Vol. 31, pp. 187-206, (1970).
  8. Kim, K. -H., "Fabrication and Properties of PECVD Silicon Nitride Films using a Tris (dimethylamino) silane of Aminosilane Precursor", J. Korean Phys. Soc., Vol. 67, (2015), in-press.