한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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X-대역 레이더용 국부 발진기의 설계 및 구현

Design and Implementation of Local Oscillator for X-Band Radar

  • 김기래 (신라대학교 전자공학과)
  • 투고 : 2014.08.05
  • 심사 : 2014.11.10
  • 발행 : 2014.11.30
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초록

본 논문은 GaAs MESFET를 이용하여 X-band 레이더용 국부발진기를 설계 및 제작하였다. GaAs MESFET는 매우 낮은 저잡음특성과 높은 전자이동도를 가지기 때문에 초고주파용 저잡음 발진기에 적합하다. 본 논문의 발진기 설계 방법은 RF 공진기를 사용하지 않고 능동소자의 부성저항 특성과 임피던스 정합법에 의해 이루어진다. 따라서 RF 공진기가 차지하는 면적을 줄일 수 있고 MMIC화가 가능하여 발진기의 크기를 소형화할 수 있는 장점이 있다. 설계된 발진기는 중심주파수 10.545 GHz에서 출력 2.30 dBm을 나타낸다.

In this paper, a local oscillator for X-band radar system is designed and fabricated with GaAs MESFET. GaAs MESFET is good for microwave oscillators because of very low noise figure and high electron mobility. Oscillator design methods in this paper are used the characteristic of negative resistance of active component and impedance matching technique without RF resonator. So, oscillator is designed in compact size because space of RF resonator is reduced and can be applied MMIC technique. Designed oscillator has characteristic of the output power of 2.30 dBm and center frequency of 10.545GHz.

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참고문헌

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