Transactions on Electrical and Electronic Materials

  • 제15권5호
  • /
  • Pages.245-248
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Dependence of Electrons Loss Behavior on the Nitride Thickness and Temperature for Charge Trap Flash Memory Applications

  • Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Ma, Dongwei (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Jing, Zhang (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Jiang, Yunhong (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Wang, Guixia (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Li, Rong (School of Mathematics and Statistics, Anyang Normal University) ;
  • Yin, Jiang (Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University)
  • 투고 : 2014.06.18
  • 심사 : 2014.07.14
  • 발행 : 2014.10.25
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초록

$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.

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참고문헌

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