Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate

내장된 전송게이트를 가지는 Gate/Body-Tied PMOSFET 광 검출기의 모델링

  • Lee, Minho (School of Electronics Engineering, Kyungpook National University) ;
  • Jo, Sung-Hyun (School of Electronics Engineering, Kyungpook National University) ;
  • Bae, Myunghan (School of Electronics Engineering, Kyungpook National University) ;
  • Choi, Byoung-Soo (School of Electronics Engineering, Kyungpook National University) ;
  • Choi, Pyung (School of Electronics Engineering, Kyungpook National University) ;
  • Shin, Jang-Kyoo (School of Electronics Engineering, Kyungpook National University)
  • Received : 2014.07.14
  • Accepted : 2014.07.30
  • Published : 2014.07.31
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Abstract

In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.

Keywords

References

  1. N. Nelson, D. Sander, M. Dandin, S. Prakash, A. Sarje, and P. Abshire, "Handheld fluorometers for Lab-on-a-Chip applications", IEEE Transactions on Biomedical Circuits and Systems, Vol. 3, No. 2, pp. 99-107, 2009.
  2. Y. W. Chang, Y. T. Tai, Y. T. Huang, and Y. S. Yang, "A phototransistorbased high-sensitivity biosensing system using 650-nm light", IEEE Journal of Sensors, Vol. 9, No. 6, pp. 673-677, 2009. https://doi.org/10.1109/JSEN.2009.2020675
  3. J. Ota, T. Tokuda, K. Kagawa, M. Nunoshita, and S. Shiosaka, "Pulse modulation CMOS image sensor for biofluorescence imaging applications", IEEE Pocdeeing of Symposim Circuit and Systems, Vol. 4, pp. 3487-3490, 2005.
  4. M. M. El-Desouki, M. J. Deen, Q. Y. Fang, L. W. C. Liu, F. Tse, and D. Armstrong, "CMOS image sensors for highspeed applications", Journal of Sensors, Vol. 9, No. 1, pp. 430-444, 2009.
  5. K. Murari, R. Etienne, N. Thakor, and G. Cauwenberghs, "Which photodioe to use: A comparison of CMOS-compatible structures", IEEE Sensors Journal, Vol. 9, No. 7, pp. 752-760, 2009. https://doi.org/10.1109/JSEN.2009.2021805
  6. I. Brouk and Y. Nemirovsky, "Dimensional effects in CMOS photodiodes", Solid-State Electronics, Vol. 46, No. 1, pp. 19-28, 2002. https://doi.org/10.1016/S0038-1101(01)00282-9
  7. H. Tian, B. Fowler, and A. E. Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor", Journal of Solid-State Circuits, Vol. 36, No. 1, pp. 92-101, 2001. https://doi.org/10.1109/4.896233
  8. Y. Ardeshirpour, M. J. Deen, and S. Shirani, "Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection", Journal of Vacuum Science & Technology A, Vol. 24, No. 3, pp. 860-865, 2006. https://doi.org/10.1116/1.2190652
  9. H. S. Wong, "Technology and device scaling considerations for CMOS imagers", IEEE Transactions on Electron Devices, Vol. 43, No. 12, pp. 2131-2142, 1996. https://doi.org/10.1109/16.544384
  10. Y. Maruyama and E. Charbon, "An all-digital, time-gated 128${\time}$128 SPAD array for on-chip, filter-less fluorescence detection", 16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), pp. 1180-1183, 2011.
  11. N. Faramarzpour, M. J. Deen, S. Shirani, and Q. Fang, "Fully integrated single photon avalanche diode detector in standard CMOS 0.18 im technology", IEEE Transactions on Electron Devices, Vol. 55, No. 3, pp. 760-767, 2008. https://doi.org/10.1109/TED.2007.914839
  12. S. H. Seo, K. D. Kim, M. W. Seo, J. S. Kong, J. K. Shin, and P. Choi, "Optical characteristics of an n-well/gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor", Sensors and Materials, Vol. 19, No. 7, pp. 435-444, 2007.
  13. J. H. Park, S. H. Seo, I. S. Wang, J. K. Shin, and P. Choi, "Highly sensitive PMOSFET photodetector and its application to CMOS active pixel sensor", Sensors and Materials, Vol. 15, pp. 361-370, 2003.
  14. H. Y. Hyun, J. S. Kong, and J. K. Shin, "Low-noise logarithmic active pixel sensor using a gate/n-well-tied PMOSFET-type photodetector", Sensors and Materials, Vol. 20, pp. 381-387, 2008.
  15. J. T. Jung, S. H. Jo, S. H. Seo, M. H. Bae, and J. K. Shin, "Highly sensitive gate/body-tied p-channel metal oxide semiconductor field effect transistor-type photodetector with an overlapping control gate", Japanese Journal of Applied Physics, Vol. 51, pp. 02BG06, 2012. https://doi.org/10.7567/JJAP.51.02BG06
  16. S. Y. Lee, S. H. Seo, J. S. Kong, S. H. Jo, K. H. Choi, P. Choi, and J. K. Shin, "Dynamic range extension of the nwell/ gate-tied PMOSFET-type photodetector with a built-in transfer gate", J. Sensor Sci. & Tech., Vol. 19. No. 4, pp. 328-335, 2010.
  17. J. S. Kong, S. H. Jo, S. Y. Lee, K. H. Choi, S. H. Seo, and J. K. Shin, "Operation of a wide dynamic range CMOS image sensor based on dual sampling mechanism and its SPICE simulationJournal of Sensor Science and Technology", J. Sensor Sci. & Tech.,Vol. 19, No. 4, pp. 285-290, 2010. https://doi.org/10.5369/JSST.2010.19.4.285
  18. E. A. Vittoz, "MOS transistors operated in the lateral bipolar mode and their application in CMOS technology", IEEE Journal of Solid-State Circuits, Vol. 18, No. 3, pp. 273-279, 1983. https://doi.org/10.1109/JSSC.1983.1051939
  19. Y. J. Kook, J. H. Cheon, J. H. Lee, Y. J. Park, "A novel bipolar imaging device-BASIC (BAse stored imager in CMOS process", IEEE Transactions on Electron Devices, Vol. 50, No. 11, pp. 2189-2195, 2003. https://doi.org/10.1109/TED.2003.816912
  20. H. Yamamoto, K. Taniguchi, and C. Hamaguchi, "Highsensitivity SOI MOS photodetector with self-amplification", Japanese Journal of Applied Physics, Vol. 35, pp. 1382-1386, 1996. https://doi.org/10.1143/JJAP.35.1382
  21. W. Zhang, M. Chan, S. Fung, and Ping K. Ko, "Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate", IEEE Electron Device Letters, Vol. 19, No. 11, pp. 435-437, 1998. https://doi.org/10.1109/55.728904
  22. W. Zhang, "High gain CMOS image sensor design and fabrication on SOI and bulk technology", The Hong Kong university of science and Technology, Ph.D. thesis, 2000.
  23. W. Zhang, "A novel high-gain CMOS iamge sensor using floating n-well/gate tied PMOSFET", IEEE International Electron Devices Meeting, pp. 1023-1025, 1998.
  24. Y. W. Chang and Y. T. Huang, "The ring-shaped CMOSbased phototransistor with high responsivity for the UV/ Blue spectral range", IEEE Photonics Technology Letters, Vol. 21, No. 13, pp. 899-901, 2009. https://doi.org/10.1109/LPT.2009.2020176
  25. Y. Huang and R. Hornsey, "Current-mode CMOS image sensor using lateral bipolar phototransistors", IEEE Trans. Electron Devices, Vol. 50, No. 12, pp. 2570-2573, 2003. https://doi.org/10.1109/TED.2003.820123
  26. R. W. Sandage and J. A. Connelly, "A fingerprint optodetector using lateral bipolar phototransistor in a standard CMOS process", IEEE International Electron Devices Meeting, pp. 171-174, 1995.
  27. F. de S. Campos, N. Faramarzpour, M. J. Deen, "Photodetection with gate-controlled lateral BJTs from standard CMOS technolog", IEEE Sensors Journal, Vol. 13, No. 5, pp. 1554-1563, 2013. https://doi.org/10.1109/JSEN.2012.2235827
  28. F. G. O'Hara, Jan J. H. van den Biesen, H. C. de Graaff, W. J. Kloosterman, and J. Barton Foley, "MODELLA-A new physics-based compact model for lateral p-n-p transistors", IEEE Transaction on Electron Devices, Vol. 39, No. 11, pp. 2553-2561, 1992. https://doi.org/10.1109/16.163463

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