마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제21권1호
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  • Pages.45-50
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  • 2014
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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습식표면처리 및 열 사이클에 따른 Cu/SiNx 계면접착에너지 평가 및 분석

Effects of Wet Chemical Treatment and Thermal Cycle Conditions on the Interfacial Adhesion Energy of Cu/SiNx thin Film Interfaces

  • 정민수 (안동대학교 신소재공학부 청정에너지소재기술연구센터) ;
  • 김정규 (안동대학교 신소재공학부 청정에너지소재기술연구센터) ;
  • 강희오 (나노종합기술원) ;
  • 황욱중 (나노종합기술원) ;
  • 박영배 (안동대학교 신소재공학부 청정에너지소재기술연구센터)
  • Jeong, Minsu (School of Materials Science and Engineering, Andong National University) ;
  • Kim, Jeong-Kyu (School of Materials Science and Engineering, Andong National University) ;
  • Kang, Hee-Oh (National Nanofab Center) ;
  • Hwang, Wook-Jung (National Nanofab Center) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
  • 투고 : 2014.02.18
  • 심사 : 2014.03.28
  • 발행 : 2014.03.30
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초록

반도체 미세구리배선 적용을 위하여 구리배선의 습식 표면처리 및 열 사이클에 따른 구리 박막과 실리콘질화막 도포층 사이의 계면접착에너지를 4점굽힘시험을 통해 정량적으로 평가하였다. 구리배선을 화학적 기계적 연마한 후 습식 표면처리를 통하여 구리 박막과 실리콘질화막의 계면접착에너지는 $10.57J/m^2$에서 $14.87J/m^2$로 증가하였다. $-45{\sim}175^{\circ}C$범위에서 250사이클 후, 표면처리를 하지 않은 시편의 계면접착에너지는 $5.64J/m^2$으로, 표면처리를 한 시편은 $7.34J/m^2$으로 감소하였으며, 모든 시편의 박리계면은 구리 박막과 실리콘질화막 계면으로 확인되었다. X-선 광전자 분광법으로 계면 결합 상태를 분석한 결과, 화학적 기계적 연마 공정 후 구리배선의 표면 산화물이 습식표면처리에 의해 효과적으로 제거된 것을 확인하였다. 또한, 열 사이클 처리동안, 구리 박막과 실리콘질화막의 큰 열 팽창 계수 차이로 인한 열응력으로 인하여 구리 박막과 실리콘질화막 계면이 취약해지고, 계면을 통한 산소유입에 따른 구리 산화층이 증가하여 계면접착에너지가 저하된 것으로 판단된다.

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.

키워드

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피인용 문헌

  1. Effects of post-annealing and temperature/humidity treatments on the interfacial adhesion energy of the Cu/SiNxinterface for Cu interconnects vol.55, pp.6S3, 2016, https://doi.org/10.7567/JJAP.55.06JD01