한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권5호
  • /
  • Pages.276-281
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  • 2014
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Metal-Oxide-Semiconductor 광전소자

Metal-Oxide-Semiconductor Photoelectric Devices

  • 강길모 (인천대학교 전기공학과) ;
  • 윤주형 (뉴욕주립 버팔로대학교 전기공학과) ;
  • 박윤창 (나노종합기술원 특성평가실) ;
  • 김준동 (인천대학교 전기공학과)
  • Kang, Kilmo (Department of Electrical Engineering, Incheon National University) ;
  • Yun, Ju-Hyung (Department of Electrical Engineering, University at Buffalo, State University of New York) ;
  • Park, Yun Chang (Measurement and Analysis Division, National Nanofab Center (NNFC)) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • 투고 : 2014.03.10
  • 심사 : 2014.04.08
  • 발행 : 2014.05.01
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초록

A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.

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참고문헌

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