반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

스퍼터 증착된 Zinc Tin Oxide 박막 트랜지스터의 공정 압력에 따른 특성 연구

The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure

  • Lee, Hong Woo (Development Center (LCD), Samsung Display) ;
  • Yang, Bong Seob (Department of Materials Science and Engineering, Seoul National University) ;
  • Oh, Seungha (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Yoon Jang (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong Joon (Department of Materials Science and Engineering, Seoul National University)
  • 투고 : 2014.02.24
  • 심사 : 2014.03.20
  • 발행 : 2014.03.31
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초록

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

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