Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Measurement and Analysis of Gate Finger Number Dependence of Input Resistance for Sub-micron MOSFETs

Sub-micron MOSFET을 위한 입력 저항의 게이트 핑거 수 종속성 측정 및 분석

  • Ahn, Jahyun (Department of Electronics Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
  • 안자현 (한국외국어대학교 전자공학과) ;
  • 이성현 (한국외국어대학교 전자공학과)
  • Received : 2014.09.24
  • Accepted : 2014.12.02
  • Published : 2014.12.25
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Abstract

Two input resistances converted from $S_{11}$-parameter and $Z_{11}$-parameter of MOSFETs with various gate finger numbers Nf were measured in low frequency region. The 1/Nf dependent input resistance from $S_{11}$-parameter exhibits much lower values than that from $Z_{11}$-parameter in the range of $Nf{\leq}64$. This 1/Nf dependence was theoretically verified by using Nf dependent nonlinear equation derived from a MOSFET equivalent circuit.

다양한 게이트 핑거 수(Nf)의 MOSFET에 대한 두 종류의 입력 저항이 $S_{11}$-parameter와 $Z_{11}$-parameter으로부터 변환 되어 저주파 영역에서 측정되었다. 본 연구에서 사용된 $Nf{\leq}64$의 범위에서 $S_{11}$-parameter로부터 추출된 1/Nf 종속 입력저항은 $Z_{11}$-parameter로부터 추출된 입력 저항보다 훨씬 낮은 값을 보여주며, 이러한 1/Nf 종속성은 MOSFET의 등가회로로부터 유도된 Nf 종속 비선형 방정식으로부터 이론적으로 증명하였다.

Keywords

References

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