Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Effects of Chloride Ion on Accelerator and Inhibitor during the Electrolytic Cu Via-Filling Plating

전해 Cu Via-Filling 도금에서 염소이온이 가속제와 억제제에 미치는 영향

  • Yu, Hyun-Chul (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • Cho, Jin-Ki (Department of Advanced Materials Engineering, Korea Polytechnic University)
  • 유현철 (한국산업기술대학교 신소재공학과) ;
  • 조진기 (한국산업기술대학교 신소재공학과)
  • Received : 2013.08.19
  • Accepted : 2013.08.28
  • Published : 2013.08.31
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Abstract

Recently, the weight reduction and miniaturization of the electronics have placed great emphasis. The miniaturization of PCB (Printed Circuit Board) as main component among the electronic components has also become progressed. The use of acid copper plating process for Via-Filling effectively forms interlayer connection in build-up PCBs with high-density interconnections. However, in the case of copper-via filled in a bath, which is greatly dependent on the effects of additives. This paper discusses effects of Cl ion on the filling of PCB vias with electrodeposited copper based on both electrochemical experiment and practical observation of cross sections of vias.

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References

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