Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of Radiation Hardened Shift Register and SEU Measurement and Evaluation using The Proton

내방사선용 Shift Register의 제작 및 양성자를 이용한 SEU 측정 평가

  • Kang, Geun Hun (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Roh, Young Tak (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Hee Chul (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
  • 강근훈 (한국과학기술원 전기 및 전자공학과) ;
  • 노영탁 (한국과학기술원 전기 및 전자공학과) ;
  • 이희철 (한국과학기술원 전기 및 전자공학과)
  • Received : 2013.01.24
  • Published : 2013.08.15
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Abstract

Memory devices including SRAM and DRAM are very susceptible to high energy radiation particles in the space. Abnormal operation of the devices is caused by SEE or TID. This paper presents a method to estimate proton SEU cross section representing the susceptibility of the latch circuit that the unit cell of the SRAM and proposes a new latch circuit to mitigate the SEU. 50b shift register was fabricated by using the conventional latch and the proposed latch in $0.35{\mu}m$ process. Irradiation experiment was conducted at KIRAMS by using 43MeV proton beam. It was found that the proposed latch-shift register is not affected by the radiation environment compared to the conventional latch-shift register.

SRAM, DRAM을 포함한 Memory 소자들은 우주환경에서 고에너지 입자에 취약하다. SEE(Single Event Effect) 또는 TID(Total Ionizing Dose)에 의해서 소자의 비정상적인 동작이 야기될 수 있다. 본 논문은 SRAM의 기본 단위 셀인 Latch 회로를 이용하여 양성자에 대한 취약성을 나타내는 SEU cross section을 추정할 수 있는 방법에 대해서 설명한다. 또한 양성자에 의한 SEU 효과를 줄일 수 있는 Latch 회로를 제안하였다. 두 소자를 이용하여 50b shift register를 $0.35{\mu}m$공정에서 제작하였고, 한국 원자력 의학원의 43MeV 양성자 빔을 이용하여 방사선 조사 실험을 진행하였다. 실험 결과로부터 conventional latch를 이용한 shift register에 비해서 제안한 latch를 이용한 shift register가 방사선 환경에서 내구성이 강한 동작 특성을 가진 다는 것을 확인하였다.

Keywords

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