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http://dx.doi.org/10.5573/ieek.2013.50.8.121

Design of Radiation Hardened Shift Register and SEU Measurement and Evaluation using The Proton  

Kang, Geun Hun (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
Roh, Young Tak (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
Lee, Hee Chul (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.8, 2013 , pp. 121-127 More about this Journal
Abstract
Memory devices including SRAM and DRAM are very susceptible to high energy radiation particles in the space. Abnormal operation of the devices is caused by SEE or TID. This paper presents a method to estimate proton SEU cross section representing the susceptibility of the latch circuit that the unit cell of the SRAM and proposes a new latch circuit to mitigate the SEU. 50b shift register was fabricated by using the conventional latch and the proposed latch in $0.35{\mu}m$ process. Irradiation experiment was conducted at KIRAMS by using 43MeV proton beam. It was found that the proposed latch-shift register is not affected by the radiation environment compared to the conventional latch-shift register.
Keywords
SEE(Single Event Effect); SEU(Single Event Upset); Proton; Latch; SEU cross section;
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