한국레이저가공학회지 (Laser Solutions)

한국레이저가공학회 (Korean Society of Laser Processing)
권호 표지

III-V 화합물반도체에서의 He-Ne Laser를 활용한 광 특성 연구

The study of characteristic III-V compound semiconductor by He-Ne laser

  • 유재용 (영남대학교 신소재공학과) ;
  • 최경수 (영남대학교 신소재공학과) ;
  • 최순돈 (영남대학교 신소재공학과)
  • Yu, Jae-Yong (Department of Engineering material, Yeungnam University) ;
  • Choi, K.S. (Department of Engineering material, Yeungnam University) ;
  • Choi, Son Don (Department of Engineering material, Yeungnam University)
  • 투고 : 2013.02.28
  • 심사 : 2013.03.20
  • 발행 : 2013.03.31
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초록

The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

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