• 제목/요약/키워드: 갈룸비소

검색결과 1건 처리시간 0.014초

III-V 화합물반도체에서의 He-Ne Laser를 활용한 광 특성 연구 (The study of characteristic III-V compound semiconductor by He-Ne laser)

  • 유재용;최경수;최순돈
    • 한국레이저가공학회지
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    • 제16권1호
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    • pp.1-4
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    • 2013

  • The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

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