JSTS:Journal of Semiconductor Technology and Science

  • 제13권4호
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  • Pages.361-366
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  • 2013
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Full-Range Analytic Drain Current Model for Depletion-Mode Long-Channel Surrounding-Gate Nanowire Field-Effect Transistor

  • Yu, Yun Seop (Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University)
  • 투고 : 2013.01.30
  • 심사 : 2013.04.17
  • 발행 : 2013.08.31
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초록

A full-range analytic drain current model for depletion-mode long-channel surrounding-gate nanowire field-effect transistor (SGNWFET) is proposed. The model is derived from the solution of the 1-D cylindrical Poisson equation which includes dopant and mobile charges, by using the Pao-Sah gradual channel approximation and the full-depletion approximation. The proposed model captures the phenomenon of the bulk conduction mechanism in all regions of device operation (subthreshold, linear, and saturation regions). It has been shown that the continuous model is in complete agreement with the numerical simulations.

키워드

참고문헌

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피인용 문헌

  1. A Unified Analytical Current Model for N- and P-Type Accumulation-Mode (Junctionless) Surrounding-Gate Nanowire FETs vol.61, pp.8, 2014, https://doi.org/10.1109/TED.2014.2329916