Journal of Welding and Joining

  • 제31권3호
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  • Pages.11-16
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  • 2013
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  • 2466-2232(pISSN)
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  • 2466-2100(eISSN)
대한용접접합학회 (The Korean Welding and Joining Society)
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3차원 패키징을 위한 TSV의 다양한 Cu 충전 기술

Various Cu Filling Methods of TSV for Three Dimensional Packaging

  • 노명훈 (서울시립대학교 공과대학 신소재공학과) ;
  • 이준형 (서울시립대학교 공과대학 신소재공학과) ;
  • 김원중 (서울시립대학교 공과대학 신소재공학과) ;
  • 정재필 (서울시립대학교 공과대학 신소재공학과) ;
  • 김형태 ((주)아프로 알앤디)
  • Roh, Myong-Hoon (Department of Materials Science and Engineering, University of Seoul) ;
  • Lee, Jun-Hyeong (Department of Materials Science and Engineering, University of Seoul) ;
  • Kim, Wonjoong (Department of Materials Science and Engineering, University of Seoul) ;
  • Jung, Jae Pil (Department of Materials Science and Engineering, University of Seoul) ;
  • Kim, Hyeong-Tea (APRO R&D)
  • 발행 : 2013.06.30
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초록

Through-silicon-via (TSV) is a major technology in microelectronics for three dimensional high density packaging. The 3-dimensional TSV technology is applied to CMOS sensors, MEMS, HB-LED modules, stacked memories, power and analog, SIP and so on which can be employed to car electronics. The copper electroplating is widely used in the TSV filling process. In this paper, the various Cu filling methods using the control of the plating process were described in detail including recent studies. Via filling behavior by each method was also introduced.

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참고문헌

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