Journal of Magnetics

The Korean Magnetics Society (한국자기학회)
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Structural and Electrical Properties of SrRuO3 thin Film Grown on SrTiO3 (110) Substrate

  • Kwon, O-Ung (Department of Physics, Hankuk University of Foreign Studies) ;
  • Kwon, Namic (Department of Physics, Hankuk University of Foreign Studies) ;
  • Lee, B.W. (Department of Physics, Hankuk University of Foreign Studies) ;
  • Jung, C.U. (Department of Physics, Hankuk University of Foreign Studies)
  • Received : 2013.01.17
  • Accepted : 2013.03.07
  • Published : 2013.03.31
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Abstract

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

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References

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