The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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Extraction and Analysis of Dual Gate FET Noise Parameter for High Frequency Modeling

고주파모델링을 위한 이중게이트 FET의 열잡음 파라미터 추출과 분석

  • 김규철 (목포해양대학교 전자공학과)
  • Received : 2013.09.05
  • Accepted : 2013.11.15
  • Published : 2013.11.30
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Abstract

In this paper, noise parameters for high frequency modeling of dual-gate FET are extracted and analyzed. To extract thermal noise parameter of dual gate, noise characteristics are measured by changing input impedance of noise source using Tuner, and the influence of pad parasitic elements are subtracted using open and short dummy structure. Measured results indicated that the dual-gate FET is improved the noise figure by 0.2dB compared with conventional cascode structure FET at 5GHz, and it confirmed that the noise figure has dropped due to reduction of capacitances between the drain and source, gate and drain by simulation and analysis of small-signal parameters.

본 논문에서는 이중게이트 FET를 고주파회로에 응용하기 위해 필요한 열잡음 파라미터를 추출하여 그 특성을 분석하였다. 이중게이트 열잡음 파라미터를 추출하기 위해 튜너를 이용해 잡음원의 임피던스를 바꿔가며 잡음특성을 측정하였으며, open과 short 더미를 이용해서 패드의 기생성분을 제거하였다. 측정결과 일반적인 캐스코드구조의 FET와 비교해서 5GHz에서 약 0.2dB의 잡음 개선효과가 있음을 확인하였으며, 시뮬레이션과 소신호 파라미터 분석을 통해 드레인 소스 및 드레인 게이트간 캐패시턴스의 감소에 의해 잡음지수가 줄어들었음을 확인하였다.

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References

  1. B. Razavi, RF Microelectronics, Prentice-Hall, Englewood Cliffs, NJ, pp. 225-226, 1998.
  2. C. C. Enz and Y. Cheng, "MOS Transistor Modeling for RF IC", IEEE J. Solid-State Circuits, Vol. 35, No. 2, pp. 186-201, 2000. https://doi.org/10.1109/4.823444
  3. G. Kim, Y. Shimizu, B. Murakami, M. Goto, K. Ueda, T. Kihara, T. Matsuoka, and K. Taniguchi: "Small-Signal and Noise Model of FD-SOI MOS Devices for Low Noise Amplifier", Jpn, J. Appl, Phys, Vol. 45, No. 9A, pp. 6872-6877, 2006. https://doi.org/10.1143/JJAP.45.6872
  4. A. Abidi, "High-Frequency Noise Measurements on FET's with Small Dimensions", IEEE Trans. Electron Devices. Vol. 33, pp. 1801-1805, 1986. https://doi.org/10.1109/T-ED.1986.22743
  5. G.Huang, T.Kim, S.Kim and B.Kim, "Post- Linearization Technique of CMOS Cascode Low Noise Amplifier Using Dual Common Gate FETs", The Institute of Electronics Engineers of Korea, Vol. 44, No. 7, pp. 41-46, 2007.
  6. R.funimoto, K.Kojima and S.Otaka "A 7-GHz 1.8dB NF CMOS Low-Noise Amplifier", IEEE Journal of Solid State Circuits, Vol. 37, No. 7, pp. 852-856, 2002. https://doi.org/10.1109/JSSC.2002.1015682
  7. T.S.Arun Samuel, N.B.Balamurugan, S.Sibitha, R.Saranya, D.Vanisri "Analytical Modeling and Simulation of Dual Material Gate Tunnel field Effect Transistors", Journal of Electrical Engineering & Technology, Vol. 8, No. 6, pp. 1481-1486, 2013. https://doi.org/10.5370/JEET.2013.8.6.1481
  8. M.Goe, "Design and Fabrication of wideband low-noise amplification stage for COMINT", The Journal of The Korea Institute of Electronic Communication Sciences, Vol. 7, No. 2, pp. 221-226, 2012.
  9. J.Lim, T.Kim, J.Park, Y.Rhee, "Implementation of Ka-band Low Noise Block Converter For Satellite TVRO", The Journal of The Korea Institute of Electronic Communication Sciences, Vol. 3, No. 2, pp. 93-100, 2008.
  10. M.Go, S.Pyo, H.Park "A Study on the amplification Block for Integrated Antenna Module Applicable to Vehicles ", The Journal of The Korea Institute of Electronic Communication Sciences, Vol. 4, No. 2, pp. 87-92, 2009.
  11. G.Kim, "Accurate parameter extraction method for FD-SOI MOSFETs RF small-signal model including non-quasi-static effects", The Journal of The Korea Institute of Maritime information & Communication Sciences, Vol. 11, No. 10, pp. 1910-1915, 2007.
  12. G.Kim, "Analysis and extraction method of noise parameters for short channel MOSFET thermal noise modeling", The Journal of The Korea Institute of Maritime Information & Communication Sciences, Vol. 13, No. 12, pp. 2655-2661, 2009.
  13. G. Knoblinger, "RF-Noise of Deep- Submicron MOSFETs Extraction and Modeling", Proc of the ESSDERC, pp. 331-334, 2001.