Bulletin of the Korean Chemical Society

  • 제33권8호
  • /
  • Pages.2675-2678
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  • 2012
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Formation of Niobium Oxide Film with Duplex Layers by Galvanostatic Anodization

  • Kim, Hyun-Kee (Department of Biological Science, Andong National University) ;
  • Yoo, Jeong-Eun (Department of Chemical Engineering, Inha University) ;
  • Park, Ji-Young (Department of Chemical Engineering, Inha University) ;
  • Seo, Eul-Won (Department of Biological Science, Andong National University) ;
  • Choi, Jin-Sub (Department of Chemical Engineering, Inha University)
  • 투고 : 2012.04.02
  • 심사 : 2012.05.15
  • 발행 : 2012.08.20
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초록

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

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